R6035ENZ1C9 Allicdata Electronics
Allicdata Part #:

R6035ENZ1C9-ND

Manufacturer Part#:

R6035ENZ1C9

Price: $ 4.49
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 600V 35A TO247
More Detail: N-Channel 600V 35A (Tc) 120W (Tc) Through Hole TO-...
DataSheet: R6035ENZ1C9 datasheetR6035ENZ1C9 Datasheet/PDF
Quantity: 335
1 +: $ 4.07610
10 +: $ 3.64077
100 +: $ 2.98532
500 +: $ 2.41737
1000 +: $ 2.03874
Stock 335Can Ship Immediately
$ 4.49
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 102 mOhm @ 18.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The R6035ENZ1C9 is a part of a family of Enhanced Context LSI products from Renesas Electronics Corporation, a leading global supplier of power semiconductor devices. It is a single-gate voltage-controlled field-effect transistor that is designed to operate at high-speed, low-noise conditions, offering high reliability and low power consumption for a wide range of industrial, automotive and consumer applications.

The R6035ENZ1C9 functions primarily as a switch, acting like an insulated gate version of a BJT (transistor) with gate voltage control, allowing current to flow when a positive voltage is applied to the gate terminal. A wide range of gate voltage operating ranges make it suitable for a wide variety of applications. As well as operation as a switch, the R6035ENZ1C9 can also be used as an amplifier, as it can provide extremely high gain and can also be used to amplify signals with low impedance. Additionally, it can be configured to provide noise attenuation and is often used in combination with other active components in noise-reduction circuits.

The R6035ENZ1C9 operates with a variety of channel resistances, from high to low, depending on the voltage applied to the gate terminal. With a gate voltage of 0V, the channel resistance is high, rising to almost infinity, whereas a higher gate voltage will reduce the channel resistance to a low value. This enables the device to operate as both a high-noise and low-noise device, as well as being able to provide extremely high gain. Furthermore, being able to control the current that can flow through the channel, makes the R6035ENZ1C9 an ideal device for use in switches and analog amplifiers where it can be used to provide low power dissipation and high gain.

The R6035ENZ1C9 is typically used in many types of electronic applications including telecommunications and computer products, automotive systems, battery chargers and solar cell systems, industrial automation, and medical equipment. It is also well-suited for circuit applications requiring wide temperature range such as smart home appliances, HVAC & motor control, and audio/video devices. The device is especially effective in high-bandwidth circuits in which power is actively managed and extremely low-noise performance is required.

In summary, the R6035ENZ1C9 is a voltage-controlled field-effect transistor that is designed to operate at high speed with low-noise performance. It is suitable for a wide range of applications, offering high reliability, low power consumption and the ability to configure low-noise circuits. Its advantages include wide range of gate voltage operating ranges, high gain, low power dissipation, and excellent temperature handling.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "R603" Included word is 32
Part Number Manufacturer Price Quantity Description
R6030KNX ROHM Semicon... 2.7 $ 455 MOSFET N-CH 600V 30A TO22...
R6035KNZ1C9 ROHM Semicon... 4.19 $ 406 MOSFET N-CHANNEL 600V 35A...
R6030MNX ROHM Semicon... 4.42 $ 498 MOSFET N-CH 600V 30A TO22...
R6030ENX ROHM Semicon... 4.1 $ 394 MOSFET N-CH 600V 30A TO22...
R6035ENZC8 ROHM Semicon... 4.49 $ 353 MOSFET N-CH 600V 35A TO3P...
R6035ENZ1C9 ROHM Semicon... 4.49 $ 335 MOSFET N-CH 600V 35A TO24...
R6030ENZC8 ROHM Semicon... 4.49 $ 298 MOSFET N-CH 600V 30A TO3P...
R6030ENZ1C9 ROHM Semicon... 4.49 $ 132 MOSFET N-CH 600V 30A TO24...
R6030KNZC8 ROHM Semicon... 3.35 $ 1080 MOSFET N-CHANNEL 600V 30A...
R6035KNZC8 ROHM Semicon... 8.77 $ 360 MOSFET N-CHANNEL 600V 35A...
R6030235ESYA Powerex Inc. 37.46 $ 1000 DIODE GEN PURP 200V 350A ...
R6030225HSYA Powerex Inc. 38.17 $ 1000 DIODE GEN PURP 200V 250A ...
R6030435ESYA Powerex Inc. 38.17 $ 1000 DIODE GEN PURP 400V 350A ...
R6030222PSYA Powerex Inc. 38.85 $ 1000 DIODE GEN PURP 200V 220A ...
R6030425HSYA Powerex Inc. 38.85 $ 1000 DIODE GEN PURP 400V 250A ...
R6030422PSYA Powerex Inc. 39.55 $ 1000 DIODE GEN PURP 400V 220A ...
R6030635ESYA Powerex Inc. 40.0 $ 1000 DIODE GEN PURP 600V 350A ...
R6030625HSYA Powerex Inc. 40.85 $ 1000 DIODE GEN PURP 600V 250A ...
R6030835ESYA Powerex Inc. 44.28 $ 1000 DIODE GEN PURP 800V 350A ...
R6030622PSYA Powerex Inc. 45.6 $ 1000 DIODE GEN PURP 600V 220A ...
R6030825HSYA Powerex Inc. 48.62 $ 1000 DIODE GEN PURP 800V 250A ...
R6031035ESYA Powerex Inc. 48.62 $ 1000 DIODE GEN PURP 1KV 350A D...
R6030822PSYA Powerex Inc. 53.4 $ 1000 DIODE GEN PURP 800V 220A ...
R6031025HSYA Powerex Inc. 53.59 $ 1000 DIODE GEN PURP 1KV 250A D...
R6031235ESYA Powerex Inc. 54.26 $ 1000 DIODE GEN PURP 1.2KV 350A...
R6031225HSYA Powerex Inc. 57.55 $ 1000 DIODE GEN PURP 1.2KV 250A...
R6031022PSYA Powerex Inc. 58.53 $ 1000 DIODE GEN PURP 1KV 220A D...
R6031435ESYA Powerex Inc. 61.55 $ 1000 DIODE GEN PURP 1.4KV 350A...
R6031222PSYA Powerex Inc. 65.58 $ 1000 DIODE GEN PURP 1.2KV 220A...
R6031425HSYA Powerex Inc. 67.75 $ 1000 DIODE GEN PURP 1.4KV 250A...
R6030KNZ1C9 ROHM Semicon... 2.84 $ 304 MOSFET N-CHANNEL 600V 30A...
R6030KNXC7 ROHM Semicon... 2.97 $ 975 MOSFET N-CH 600V 30A TO22...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics