Allicdata Part #: | R6035ENZ1C9-ND |
Manufacturer Part#: |
R6035ENZ1C9 |
Price: | $ 4.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 35A TO247 |
More Detail: | N-Channel 600V 35A (Tc) 120W (Tc) Through Hole TO-... |
DataSheet: | R6035ENZ1C9 Datasheet/PDF |
Quantity: | 335 |
1 +: | $ 4.07610 |
10 +: | $ 3.64077 |
100 +: | $ 2.98532 |
500 +: | $ 2.41737 |
1000 +: | $ 2.03874 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2720pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 102 mOhm @ 18.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The R6035ENZ1C9 is a part of a family of Enhanced Context LSI products from Renesas Electronics Corporation, a leading global supplier of power semiconductor devices. It is a single-gate voltage-controlled field-effect transistor that is designed to operate at high-speed, low-noise conditions, offering high reliability and low power consumption for a wide range of industrial, automotive and consumer applications.
The R6035ENZ1C9 functions primarily as a switch, acting like an insulated gate version of a BJT (transistor) with gate voltage control, allowing current to flow when a positive voltage is applied to the gate terminal. A wide range of gate voltage operating ranges make it suitable for a wide variety of applications. As well as operation as a switch, the R6035ENZ1C9 can also be used as an amplifier, as it can provide extremely high gain and can also be used to amplify signals with low impedance. Additionally, it can be configured to provide noise attenuation and is often used in combination with other active components in noise-reduction circuits.
The R6035ENZ1C9 operates with a variety of channel resistances, from high to low, depending on the voltage applied to the gate terminal. With a gate voltage of 0V, the channel resistance is high, rising to almost infinity, whereas a higher gate voltage will reduce the channel resistance to a low value. This enables the device to operate as both a high-noise and low-noise device, as well as being able to provide extremely high gain. Furthermore, being able to control the current that can flow through the channel, makes the R6035ENZ1C9 an ideal device for use in switches and analog amplifiers where it can be used to provide low power dissipation and high gain.
The R6035ENZ1C9 is typically used in many types of electronic applications including telecommunications and computer products, automotive systems, battery chargers and solar cell systems, industrial automation, and medical equipment. It is also well-suited for circuit applications requiring wide temperature range such as smart home appliances, HVAC & motor control, and audio/video devices. The device is especially effective in high-bandwidth circuits in which power is actively managed and extremely low-noise performance is required.
In summary, the R6035ENZ1C9 is a voltage-controlled field-effect transistor that is designed to operate at high speed with low-noise performance. It is suitable for a wide range of applications, offering high reliability, low power consumption and the ability to configure low-noise circuits. Its advantages include wide range of gate voltage operating ranges, high gain, low power dissipation, and excellent temperature handling.
The specific data is subject to PDF, and the above content is for reference
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