| Allicdata Part #: | R6030KNXC7-ND |
| Manufacturer Part#: |
R6030KNXC7 |
| Price: | $ 2.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 600V 30A TO220FM |
| More Detail: | N-Channel 600V 30A (Tc) 86W (Tc) Through Hole TO-2... |
| DataSheet: |  R6030KNXC7 Datasheet/PDF |
| Quantity: | 975 |
| 1 +: | $ 2.69640 |
| 10 +: | $ 2.40912 |
| 100 +: | $ 1.97536 |
| 500 +: | $ 1.59956 |
| 1000 +: | $ 1.34902 |
| Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FM |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 86W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2350pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Rds On (Max) @ Id, Vgs: | 130 mOhm @ 14.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
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The R6030KNXC7 is a transistor-based device used primarily in mobile communication systems. It\'s an enhancement-mode, n-channel MOSFET (metal–oxide–semiconductor field-effect transistor) that\'s specifically created and designed to withstand radio-frequency (RF) applications. This means that it\'s capable of functioning as a reliable amplifier in high-frequency (HF) and ultra-high-frequency (UHF) devices such as multi-mode transceivers and base transceivers.
The R6030KNXC7 is an optimization of the R6030K family of transistors and is designed for versatility, allowing for the most flexibility in application. This transistor was developed and designed with a wide range of applications in mind. It can be used only as an amplifier, or in conjunction with other circuit components, such as an oscillator or a low-noise amplifier (LNA).
The R6030KNXC7 is a single-sided, N-channel device, meaning that it contains a single gate with an N-type region on the source side of the device. It is constructed of a body, a substrate, and the drain. The device also has a high-frequency conversion factor, which allows it to handle the high frequencies associated with radio frequencies.
The working principle behind the R6030KNXC7 is fairly simple. It is an enhancement-mode device, which means that it operates by applying a gate voltage higher than the threshold voltage. This causes the transistor to become conducting, allowing electrons to flow from the source to the drain. The transistor also includes a “body effect” which ensures that the drain-to-source current flow is regulated.
The R6030KNXC7 is a versatile and dependable device, thanks to its wide range of applications, durability and high frequency conversion factor. It is the go-to transistor for modern mobile communications, and is the perfect choice for HF and UHF applications.
The specific data is subject to PDF, and the above content is for reference
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