R6030ENZ1C9 Allicdata Electronics
Allicdata Part #:

R6030ENZ1C9-ND

Manufacturer Part#:

R6030ENZ1C9

Price: $ 4.49
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 600V 30A TO247
More Detail: N-Channel 600V 30A (Tc) 120W (Tc) Through Hole TO-...
DataSheet: R6030ENZ1C9 datasheetR6030ENZ1C9 Datasheet/PDF
Quantity: 132
1 +: $ 4.07610
10 +: $ 3.64077
100 +: $ 2.98532
500 +: $ 2.41737
1000 +: $ 2.03874
Stock 132Can Ship Immediately
$ 4.49
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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R6030ENZ1C9 is a type of MOSFET (metal-oxide field-effect-transistor), specifically a single-transistor device. It is able to act as a switch, amplifying or isolating signals within a circuit. The transistor has a wide range of possible applications, from being used in consumer electronics to military or industrial-grade devices.

The transistor uses three distinct terminals for its operation: the drain, the gate and the source. The drain and source are both connected to conducting channels, while the gate is the control element. When no current is passing through the gate, the two conducting channels are separated by an insulating layer of metal-oxide and they behave as an open switch, perfect for isolating one node from another. When current is applied to the gate through an external voltage source, the metal-oxide layer becomes thin and the electric field between the two conducting channels is reduced, allowing current to flow through the transistor as if it were a closed switch and connecting the drain and source nodes. This switching action can be further modified by increasing or decreasing the voltage or current applied to the gate of the transistor to adjust the electric field and the conductivity of the device.

To ensure maximum performance, the R6030ENZ1C9 transistor features a thick metal-oxide layer and a maximum resistance of 44.4 ohms when the switch is off. It also has a high-power device rating when on, with a maximum drain current of 32amps and a surge current rating of 100amps. This makes it suitable for a variety of heavy-duty applications, such as industrial motors and monitors, as well as most electronic consumer products.

In summary, R6030ENZ1C9 is a single-transistor MOSFET device that is well-suited for a variety of applications. It offers superior switching performance, ensuring a reliable and efficient connection between the two channels. With its wide range of operating power and current ratings, the transistor can be used in a variety of different situations, such as consumer electronics, military projects and industrial monitoring.

The specific data is subject to PDF, and the above content is for reference

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