Allicdata Part #: | R6030ENZ1C9-ND |
Manufacturer Part#: |
R6030ENZ1C9 |
Price: | $ 4.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 30A TO247 |
More Detail: | N-Channel 600V 30A (Tc) 120W (Tc) Through Hole TO-... |
DataSheet: | R6030ENZ1C9 Datasheet/PDF |
Quantity: | 132 |
1 +: | $ 4.07610 |
10 +: | $ 3.64077 |
100 +: | $ 2.98532 |
500 +: | $ 2.41737 |
1000 +: | $ 2.03874 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 14.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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R6030ENZ1C9 is a type of MOSFET (metal-oxide field-effect-transistor), specifically a single-transistor device. It is able to act as a switch, amplifying or isolating signals within a circuit. The transistor has a wide range of possible applications, from being used in consumer electronics to military or industrial-grade devices.
The transistor uses three distinct terminals for its operation: the drain, the gate and the source. The drain and source are both connected to conducting channels, while the gate is the control element. When no current is passing through the gate, the two conducting channels are separated by an insulating layer of metal-oxide and they behave as an open switch, perfect for isolating one node from another. When current is applied to the gate through an external voltage source, the metal-oxide layer becomes thin and the electric field between the two conducting channels is reduced, allowing current to flow through the transistor as if it were a closed switch and connecting the drain and source nodes. This switching action can be further modified by increasing or decreasing the voltage or current applied to the gate of the transistor to adjust the electric field and the conductivity of the device.
To ensure maximum performance, the R6030ENZ1C9 transistor features a thick metal-oxide layer and a maximum resistance of 44.4 ohms when the switch is off. It also has a high-power device rating when on, with a maximum drain current of 32amps and a surge current rating of 100amps. This makes it suitable for a variety of heavy-duty applications, such as industrial motors and monitors, as well as most electronic consumer products.
In summary, R6030ENZ1C9 is a single-transistor MOSFET device that is well-suited for a variety of applications. It offers superior switching performance, ensuring a reliable and efficient connection between the two channels. With its wide range of operating power and current ratings, the transistor can be used in a variety of different situations, such as consumer electronics, military projects and industrial monitoring.
The specific data is subject to PDF, and the above content is for reference
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