R8002ANX

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The R8002ANX is an Advanced Power MOSFET designed for use in switched mode and linear power supplies. It enables a high level of efficiency and performance to be achieved without having to use a large number of discrete components. Its advanced technology provides an improved switching and conduction performance over traditional power MOSFETs, while also providing a low on-resistance, low gate charge and low gate drive power.

The R8002ANX is offered in a single die with a 55V drain-to-source normal operating voltage, a 10.7W package, and a 22A current capability. It includes two independent high-speed internal MOSFETs with a single easy-to-use package. This MOSFET integrates two independent FETs plus a control circuit, providing superior thermal and electrical performance. With its advanced MOSFET-on-Chip (MOC) technology, the R8002ANX is designed to perform in a wide range of applications, from medical and automotive to industrial and telecom applications.

Application Fields

The R8002ANX is suitable for use in a wide variety of wired and wireless communications systems, power supplies and various types of switches, capacitors and other power device applications. The R8002ANX is designed for high frequency operation, high efficiency power conversion and high power density applications, making it ideal for PFC, DC-DC converters, high frequency switching, motor drivers and other high-speed switching applications.

In addition, the R8002ANX is suitable for use in many automotive and industrial applications. It can be used in a range of power stages, such as synchronous rectification, DC motor control, PWM converters, and servo motor control. It is also suitable for the power control of communication systems and consumer electronic products. Other applications include lighting controls, solar panel management and other applications requiring safe, stable and high-efficiency operation.

Working Principle

The R8002ANX is a MOSFET-on-Chip (MOC) device that works like two independent FETs switch circuits. It contains two independent high-speed, low-on-resistance FETs with a single, easy-to-use package. It also has a built-in control circuit for superior thermal and electrical performance. The control circuit provides a low gate drive power, which is ideal for high frequency and high efficiency operation.

The R8002ANX operates in either an n-channel or p-channel mode, depending on the voltage applied to the gate. When the gate voltage is below the threshold voltage of the device (usually around 4V), the device operates in an n-channel mode. In this mode, the device behaves like an N-type FET, with electrons being the majority carrier. When the gate voltage is above the threshold voltage, the device operates in a p-channel mode, and behaves like a P-type FET, with holes as the majority carrier.

The R8002ANX can be used as both a high speed switch and as an amplifier. The device provides low on-resistance, high efficiency operation and good switching performance. It is also highly efficient, reducing thermal power losses and improving power supply efficiency and power density.

Conclusion

The R8002ANX is a sophisticated MOSFET-on-Chip (MOC) device that is ideally suited for many power supply, motor driver, and communications application. It provides low on-resistance, high efficiency operation and good switching performance, while also providing a low gate drive power, which is needed for high frequency and highly efficient operation. It is also suitable for use in a range of wired and wireless communication systems, power supplies, capacitors and other power device applications. With its advanced MOSFET-on-Chip (MOC) technology, the R8002ANX is designed to provide excellent thermal and electrical performance in a wide range of applications, from medical and automotive to industrial and telecom applications.

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