Allicdata Part #: | R8010ANX-ND |
Manufacturer Part#: |
R8010ANX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 800V 10A TO220 |
More Detail: | N-Channel 800V 10A (Tc) 40W (Tc) Through Hole TO-2... |
DataSheet: | R8010ANX Datasheet/PDF |
Quantity: | 145 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 560 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1750pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 40W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FM |
Package / Case: | TO-220-3 Full Pack |
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The R8010ANX is a single source enhancement mode MOSFET. It is optimized for use in a variety of power management, desensitization, and power conversion applications with switching frequencies up to 200 kHz. The device features low profiles, gate-controlled biasing, and highly efficient operation.
The single source enhancement mode MOSFET is an excellent solution for a wide range of wide-power applications, including power management, DC/DC regulators, power conversion, desensitization, power switching, and load switching applications. It offers a wide operating voltage range from 2.5 to 18 V and can handle current-processing ranges from 3 A to 8 A. With an on-resistance of 5.5 Ω, the R8010ANX is optimized for high-efficiency and power-saving applications.
Working Principle
The R8010ANX works on the principle of “MOSFETs” (Metal Oxide Semiconductor Field Effect Transistors). MOSFETs are voltage-controlled electronic components that regulate the flow of electrical current through a component. In the MOSFET’s simplest form, it consists of a source, a gate and a drain, which are connected through an insulated channel. The control of current flow is done by changing the voltage on the gate. Applying a voltage across the gate changes the electric field in the insulated channel, which in turn increases or decreases the channel resistance. This resistance change is used to control the flow of current.
When the working voltage is applied across the source and the drain, a channel is formed between the source and the drain that allows current to flow through when the gate voltage is applied. The R8010ANX is an enhancement mode MOSFET, meaning that the channel of the device is off when no voltage is applied to the gate, and the current will flow through the device when the gate is high, allowing the device to work under low voltage applications. The R8010ANX is designed to optimize power efficiency and performance. It features a low on-state resistance, a high switching speed, and very low gate capacitance, making it an excellent choice for a wide range of power management, desensitization and power conversion applications.
Application Field
The R8010ANX is a versatile power management device ideal for a variety of power conversion, desensitization, and power switching applications. It provides a high efficiency and performance suitable for applications such as DC/DC regulators, switch-mode power supplies, voltage regulators, and AC/DC converters. It can be used in computers, cell phones, notebook PCs, LCD TVs, and many other electronic devices that require reliable power management.
The R8010ANX is also suitable for applications that require high switching frequencies up to 200 kHz such as motor drives, inverters, and DC to AC power converters. The device can also be used in automotive power management applications such as lighting systems and fuel injection systems. With its low capacitance and fast switching speeds, the R8010ANX is an excellent choice for power management and power conversion applications.
Conclusion
The R8010ANX is a single source enhancement mode MOSFET device optimized for a wide range of power management, desensitization and power conversion applications. Its low on-state resistance, high switching speed, and low gate capacitance make it suitable for applications with switching frequencies up to 200 kHz. The device is an ideal choice for DC/DC regulators, switch-mode power supplies, voltage regulators, AC/DC converters, and automotive power management applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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R8010ANX | ROHM Semicon... | -- | 145 | MOSFET N-CH 800V 10A TO22... |
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