Name: RAF040P01TCL Discrete Semiconductor Products
Brand: ROHM Semiconductor
SKU: RAF040P01TCLTR-ND
Availability: InStock

RAF040P01TCL Discrete Semiconductor Products
Allicdata Part #:	RAF040P01TCLTR-ND
Manufacturer Part#:	RAF040P01TCL
Price:	$ 0.00
Product Category:	Discrete Semiconductor Products
Manufacturer:	ROHM Semiconductor
Short Description:	MOSFET P-CH 12V 4A TUMT3
More Detail:	P-Channel 12V 4A (Ta) 800mW (Ta) Surface Mount TUM...
DataSheet:	RAF040P01TCL Datasheet/PDF
Quantity:	1000

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Specifications

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	30 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	37nC @ 4.5V
Vgs (Max):	-8V
Input Capacitance (Ciss) (Max) @ Vds:	4000pF @ 6V
FET Feature:	--
Power Dissipation (Max):	800mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TUMT3
Package / Case:	3-SMD, Flat Leads

Description

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The RAF040P01TCL is a type of insulated-gate field-effect transistor (IGFET), also known as a metal-oxide semiconductor field-effect transistor (MOSFET). This type of transistor is manufactured by ROHM and utilizes TrenchCap P-channel technology. This MOSFET is commonly used in power switching applications, as it is highly efficient and can deliver up to 20A continuous drain current.

This type of device is an enhancement-mode or “normally-off” device, meaning that when there is no voltage applied to the gate terminal, the device is in the “off” state. A small voltage will be required to turn the device “on” and it will remain in that state even after the voltage is removed. This makes the device suitable for many power switching applications, including use in electric vehicles, appliances, and power supplies.

The RAF040P01TCL is an enhancement-mode MOSFET, meaning that from a functional standpoint the semiconductor is “normally off” and only switches “on” when a positive voltage is applied to the gate terminal. This voltage supplies the energy required to activate the electrons within the semiconductor, allowing for the flow of current through the channel.

The RAF040P01TCL is a P-Channel device, meaning that the current flows in a single direction, from the drain to the source terminal. The higher the gate voltage, the higher the current will flow, allowing for the device to be used as a controllable switch. This device also features a high level of immunity to both dv/dt noise and temperature variation and can thus be used in a variety of application fields.

The RAF040P01TCL can be used in a variety of applications including motor control, small inverters, and general power control. The device is highly efficient and can handle a maximum drain current of up to 20A with a voltage of up to 50V. This makes it an excellent choice for use in electric vehicles and other power control applications.

In conclusion, the RAF040P01TCL is a type of insulated-gate field-effect transistor (IGFET) manufactured by ROHM and is an enhancement-mode P-channel MOSFET designed for use in power control applications. The device is highly efficient and can handle a maximum drain current of up to 20A with a voltage of up to 50V and is an excellent choice for use in electric vehicles and other power control applications.

The specific data is subject to PDF, and the above content is for reference