RC28F256M29EWLA Allicdata Electronics
Allicdata Part #:

RC28F256M29EWLA-ND

Manufacturer Part#:

RC28F256M29EWLA

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256M PARALLEL 64FBGA
More Detail: FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Pa...
DataSheet: RC28F256M29EWLA datasheetRC28F256M29EWLA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8, 16M x 16)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)
Base Part Number: 28F256M29EW
Description

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The RC28F256M29EWLA memory is a type of flash memory, specifically a Multi-Level Cell (MLC) NAND flash device. It is one of the most popular flash memory devices used in many consumer electronics products, such as cameras, smartphones, tablets, and more. This article will discuss the application field and working principle of the RC28F256M29EWLA.

Application Field

The RC28F256M29EWLA is a highly reliable and efficient memory device that is used in a wide range of consumer electronics and automotive applications. It is particularly well-suited for applications that require high endurance, such as automotive electronics, where the device can store data such as vehicle engine and electrical system information. It is also used in digital cameras, portable media players, and laptop computers. In addition to its use in consumer electronic applications, the RC28F256M29EWLA is now being used in industrial automation and control systems. In these types of systems, the RC28F256M29EWLA offers excellent data storage and retrieval performance with low maintenance requirements. Its ability to withstand harsh conditions makes it a reliable choice for use in outdoor and extreme climates.

Working Principle

The RC28F256M29EWLA memory device is based on Multi-Level Cell (MLC) NAND flash technology. This technology utilizes the charge-trapping property of silicon nitride and uses four bits of data instead of the conventional two-bit-per-cell structure. This enables the device to store more data in the same area, resulting in a higher density compared to conventional two-bit NAND flash memory. The RC28F256M29EWLA uses a dual-bitline architecture to maximize storage density. This architecture consists of two bit lines that are read or written together. The dual bitlines allow the device to store larger amounts of data in a much smaller package while still offering excellent speed and endurance. The RC28F256M29EWLA also utilizes ECC (Error Correction Code) to ensure data integrity and reduce the likelihood of data corruption. The device also uses an advanced multi-bit-recovery algorithm to help recover data erroneously erased due to unexpected power failures. In summary, the RC28F256M29EWLA is a high-endurance, reliable memory device with excellent performance that is suitable for use in a variety of applications. It is used in consumer electronics, automotive systems, and industrial automation and control systems. Its use of Multi-Level Cell (MLC) NAND flash technology and dual-bitline architecture ensures improved storage density and faster data read and write speeds compared to conventional two-bit NAND flash memory. In addition, its ECC and multi-bit-recovery algorithms help ensure data integrity and help protect data from errors caused by unexpected power outages.

The specific data is subject to PDF, and the above content is for reference

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