RCD100N20TL Allicdata Electronics
Allicdata Part #:

RCD100N20TL-ND

Manufacturer Part#:

RCD100N20TL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 200V 10A CPT3
More Detail: N-Channel 200V 10A (Tc) 850mW (Ta), 20W (Tc) Surfa...
DataSheet: RCD100N20TL datasheetRCD100N20TL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 182 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RCD100N20TL is a type of Insulated Gate Bipolar Transistor (IGBT). This type of transistor is well-known for its uses in applications that require high current and power switching with relatively low gate drive. Examples of applications using this type of transistor include power converters, UPS systems, DC-DC converters, and motor drives for robotics. Despite their many uses, IGBTs are mostly used for free-wheeling. Therefore, in many applications, the RCD100N20TL has found its value.An IGBT is a voltage-controlled device, meaning that it is switchable by applying a voltage to the gate terminal. It shares some common characteristics with both a MOSFET and a bipolar junction transistor (BJT). An IGBT is composed of two different regions, a P-type layer between a N-type layer, and a gate terminal. This gate can be seen as a channel in which to control the flow of current. Furthermore, the IGBT uses both P-type and N-type material to provide a more efficient way to switch power.Since the IGBT is operated with the gate, the devices can be controlled more rapidly. This makes them well-suited for devices that require switching frequencies very quickly in order to avoid destructive parasitic effects. As previously mentioned, the RCD100N20TL is mainly used in free-wheeling devices, as its low gate drive allows it to be operated with little power.How Does the RCD100N20TL Work?The RCD100N20TL is a specific kind of IGBT designed for high power applications. It is constructed from two N-type layers and a P-type layer sandwiched between them, as well as a gate terminal which is used for voltage control.When a voltage is applied to the gate terminal, an electric field is established, allowing current to flow through the IGBT. As the IGBT’s voltage increases, the current flowing through the IGBT increases. This is known as the “voltage-current” characteristic of the IGBT. The RCD100N20TL is designed to have a high breakdown voltage, allowing it to be used for higher current applications.In addition to its current handling capabilities, the RCD100N20TL is also known for its very low conduction losses. This is because the IGBT is able to switch quickly and has a low on-state resistance, meaning it will move current quickly while dissipating less heat.Overall, the RCD100N20TL is a robust IGBT designed for high current and power switching applications such as UPS systems, DC-DC converters, and motor drives for robotics. Its versatile and efficient design also makes it well-suited for free-wheeling applications. Furthermore, its very low gate drive allows it to be operated with little power.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RCD1" Included word is 2
Part Number Manufacturer Price Quantity Description
RCD100N19TL ROHM Semicon... 0.36 $ 1000 MOSFET N-CH 190V 10A CPT3...
RCD100N20TL ROHM Semicon... -- 1000 MOSFET N-CH 200V 10A CPT3...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics