Allicdata Part #: | RCD100N20TL-ND |
Manufacturer Part#: |
RCD100N20TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 200V 10A CPT3 |
More Detail: | N-Channel 200V 10A (Tc) 850mW (Ta), 20W (Tc) Surfa... |
DataSheet: | RCD100N20TL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5.25V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | CPT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 850mW (Ta), 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 182 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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RCD100N20TL is a type of Insulated Gate Bipolar Transistor (IGBT). This type of transistor is well-known for its uses in applications that require high current and power switching with relatively low gate drive. Examples of applications using this type of transistor include power converters, UPS systems, DC-DC converters, and motor drives for robotics. Despite their many uses, IGBTs are mostly used for free-wheeling. Therefore, in many applications, the RCD100N20TL has found its value.An IGBT is a voltage-controlled device, meaning that it is switchable by applying a voltage to the gate terminal. It shares some common characteristics with both a MOSFET and a bipolar junction transistor (BJT). An IGBT is composed of two different regions, a P-type layer between a N-type layer, and a gate terminal. This gate can be seen as a channel in which to control the flow of current. Furthermore, the IGBT uses both P-type and N-type material to provide a more efficient way to switch power.Since the IGBT is operated with the gate, the devices can be controlled more rapidly. This makes them well-suited for devices that require switching frequencies very quickly in order to avoid destructive parasitic effects. As previously mentioned, the RCD100N20TL is mainly used in free-wheeling devices, as its low gate drive allows it to be operated with little power.How Does the RCD100N20TL Work?The RCD100N20TL is a specific kind of IGBT designed for high power applications. It is constructed from two N-type layers and a P-type layer sandwiched between them, as well as a gate terminal which is used for voltage control.When a voltage is applied to the gate terminal, an electric field is established, allowing current to flow through the IGBT. As the IGBT’s voltage increases, the current flowing through the IGBT increases. This is known as the “voltage-current” characteristic of the IGBT. The RCD100N20TL is designed to have a high breakdown voltage, allowing it to be used for higher current applications.In addition to its current handling capabilities, the RCD100N20TL is also known for its very low conduction losses. This is because the IGBT is able to switch quickly and has a low on-state resistance, meaning it will move current quickly while dissipating less heat.Overall, the RCD100N20TL is a robust IGBT designed for high current and power switching applications such as UPS systems, DC-DC converters, and motor drives for robotics. Its versatile and efficient design also makes it well-suited for free-wheeling applications. Furthermore, its very low gate drive allows it to be operated with little power.
The specific data is subject to PDF, and the above content is for reference
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