RCJ081N20TL Discrete Semiconductor Products |
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Allicdata Part #: | RCJ081N20TLTR-ND |
Manufacturer Part#: |
RCJ081N20TL |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 200V 8A LPT |
More Detail: | N-Channel 200V 8A (Tc) 1.56W (Ta), 40W (Tc) Surfac... |
DataSheet: | RCJ081N20TL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.31516 |
Vgs(th) (Max) @ Id: | 5.25V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | LPTS (SC-83) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.56W (Ta), 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 770 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RCJ081N20TL transistor is a specialized type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is specifically designed to provide better performance, non-linear voltage control, high switching speed, and high power handling capabilities at low temperatures, making it suitable for a wide range of applications. It has also been optimized for use in digital circuits.
The RCJ081N20TL is built from three main parts: Drain, Source, and Gate. The gate-source voltage (GS) is applied across the gate and source leads of the device. This creates an electrical field, causing a depletion region to form in the semiconductor material between the source and drain contacts. This region limits the amount of electrical current that can flow through the device. The size of this depletion region is determined by the gate-source voltage.
The working principle of the RCJ081N20TL is fairly simple. When a negative voltage is applied to the gate, the channel between the source and the drain is pinched off, and the current flowing through the transistor is prevented, or “cut off”. This is known as the OFF state. When a positive voltage is applied to the gate, the channel between the source and the drain is opened up, allowing current to flow through the transistor. This is known as the ON state.
The RCJ081N20TL has a wide range of applications, from power electronics and telecommunication equipment, to motor control and audio amplifiers. Its tolerance to low temperatures and high power handling capabilities make it particularly suitable for use in automotive applications. In addition, its non-linear voltage control and high switching speed allow it to be used in digital circuits, providing precise control over the flow of current.
The RCJ081N20TL has become a popular choice for applications that require precise control over the amount of current passing through them. With its high power handling capabilities and non-linear voltage control, it provides a cost-effective solution to many of the problems encountered in today’s applications. Whether it is used in motor control, audio amplifiers, or power electronics, the RCJ081N20TL is sure to provide a reliable and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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