RCJ081N20TL Allicdata Electronics

RCJ081N20TL Discrete Semiconductor Products

Allicdata Part #:

RCJ081N20TLTR-ND

Manufacturer Part#:

RCJ081N20TL

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 200V 8A LPT
More Detail: N-Channel 200V 8A (Tc) 1.56W (Ta), 40W (Tc) Surfac...
DataSheet: RCJ081N20TL datasheetRCJ081N20TL Datasheet/PDF
Quantity: 1000
1000 +: $ 0.31516
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTS (SC-83)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 770 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RCJ081N20TL transistor is a specialized type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is specifically designed to provide better performance, non-linear voltage control, high switching speed, and high power handling capabilities at low temperatures, making it suitable for a wide range of applications. It has also been optimized for use in digital circuits.

The RCJ081N20TL is built from three main parts: Drain, Source, and Gate. The gate-source voltage (GS) is applied across the gate and source leads of the device. This creates an electrical field, causing a depletion region to form in the semiconductor material between the source and drain contacts. This region limits the amount of electrical current that can flow through the device. The size of this depletion region is determined by the gate-source voltage.

The working principle of the RCJ081N20TL is fairly simple. When a negative voltage is applied to the gate, the channel between the source and the drain is pinched off, and the current flowing through the transistor is prevented, or “cut off”. This is known as the OFF state. When a positive voltage is applied to the gate, the channel between the source and the drain is opened up, allowing current to flow through the transistor. This is known as the ON state.

The RCJ081N20TL has a wide range of applications, from power electronics and telecommunication equipment, to motor control and audio amplifiers. Its tolerance to low temperatures and high power handling capabilities make it particularly suitable for use in automotive applications. In addition, its non-linear voltage control and high switching speed allow it to be used in digital circuits, providing precise control over the flow of current.

The RCJ081N20TL has become a popular choice for applications that require precise control over the amount of current passing through them. With its high power handling capabilities and non-linear voltage control, it provides a cost-effective solution to many of the problems encountered in today’s applications. Whether it is used in motor control, audio amplifiers, or power electronics, the RCJ081N20TL is sure to provide a reliable and cost-effective solution.

The specific data is subject to PDF, and the above content is for reference

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