RCJ450N20TL Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	5V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	LPTS
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1.56W (Ta), 40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4200pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	80nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	55 mOhm @ 22.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to RCJ450N20TL

RCJ450N20TL is a n-channel insulation gate field effect transistor (FET). It is designed to be used as an analog switch in a wide variety of electronic applications. It has a low drain-source on-state resistance (RDS(on)) and operates on a supply voltage of 20 Volts. The transistor also features low gate charge, fast switching times, and a small-signal capacitance (Ciss) of 6,400 femtofarads for high frequency performance.

Application Field

The RCJ450N20TL can be used as an analog switch in a variety of electronic circuits. Such applications may include switching power supplies and audio amplifiers. The low on-state resistance, fast switching times, and low gate charge allow it to perform switching and modulation duties with ease. It can also be used in pulse switching applications, such as in time-delayed power-on reset (POR) circuits and frequency modulation systems. The small-signal Ciss makes the RCJ450N20TL well-suited for high-frequency switching operations, such as in digital switching systems.

Working Principle

The working principle of the RCJ450N20TL is based on the generation of a drain-source voltage, by applying a positive gate-source voltage (VGS). When the VGS reaches a certain threshold voltage (also known as the “turn-on” threshold), the transistor switches on and a current can flow between the drain and the source terminals. This current is called the “drain current” (ID). The ID can be adjusted by varying the VGS.At higher VGS values, the current will increase as the transistor is further “turned on”. To turn “off” the transistor, the VGS should be reduced to below the “turn-off” threshold voltage. When this occurs, the current flow ceases, and the transistor is in its “off” state.The gate current (IG) of the transistor is low enough so that it can operate in a variety of applications with minimal energy consumption. The output characteristics of the RCJ450N20TL can be adjusted through the selection of the gate current (IG). The output characteristics are adjusted by exploiting the “avalanche” effect produced by the drain-gate junction.

Conclusion

The RCJ450N20TL insulation gate field effect transistor (FET) provides an excellent solution for switching and modulation duties in a variety of applications, such as switching power supplies and audio amplifiers. It features a low drain-source on-state resistance (RDS(on)), fast switching times, low gate charge, and a small-signal capacitance (Ciss) of 6,400 femtofarads for high-frequency performance. Its working principle is based on the generation of a drain-source voltage by applying a positive gate-source voltage, and its output characteristics can be adjusted via the selection of the gate current (IG).

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