Allicdata Part #: | RCX051N25-ND |
Manufacturer Part#: |
RCX051N25 |
Price: | $ 0.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 250V 5A TO220 |
More Detail: | N-Channel 250V 5A (Tc) 2.23W (Ta), 30W (Tc) Throug... |
DataSheet: | RCX051N25 Datasheet/PDF |
Quantity: | 307 |
1 +: | $ 0.82530 |
10 +: | $ 0.73206 |
100 +: | $ 0.57866 |
500 +: | $ 0.44876 |
1000 +: | $ 0.35428 |
Vgs(th) (Max) @ Id: | 5.5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2.23W (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.36 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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RCX051N25 is a single N-channel MOSFET transistor and it belongs to the transistors-FETs & MOSFETs - Single group. This device has been developed by ROHM semiconductor with a wide variety of practical and effective applications as its main goal. Furthermore, RCX051N25 transistor is also capable of developing good performance in the areas of electrical characteristics, and it has become one of the most used transistors in many industries.
The application field of RCX051N25 transistor is wide. It is mainly used in common electronic circuits and applications such as switching circuits, and it can also help reduce power consumption and provide designed protection for sensitive circuits and devices. Furthermore, it can be used for sensor circuits, voltage regulator circuits, and some other kinds of circuits, AC and DC. Apart from these applications, it can also be used in radio frequency circuits, DC to DC converters, power amplification stages, and in some other advanced levels of circuits.
The working principle of RCX051N25 transistor is based on a structure that combines an n-type semiconductor layer with a p-type semiconductor layer. This structure enables the transistor to control the current flow through its base as well as enabling it to be used as a switch. When a voltage is applied to its base, it will create a channel in the p-type semiconductor, thus enabling the flow of current. This same principle can be used to provide protection against overvoltage or overcurrent in some sensitive circuits. It is also capable of working as an amplifier.
In conclusion, RCX051N25 is a single N-channel MOSFET transistor which belongs to the transistors-FETs & MOSFETs – Single group. This device has a wide variety of practical applications, ranging from switching circuits to voltage regulator circuits. It is also capable of providing designed protection for sensitive circuits and devices. Its working principle relies on the creation of a channel in the p-type semiconductor through the application of a voltage to its base, thus allowing for the flow of current. In addition, it can also be used as an amplifier.
The specific data is subject to PDF, and the above content is for reference
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