| Allicdata Part #: | RCX330N25-ND |
| Manufacturer Part#: |
RCX330N25 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 250V 33A TO-220FM |
| More Detail: | N-Channel 250V 33A (Ta) 2.23W (Ta), 40W (Tc) Throu... |
| DataSheet: |  RCX330N25 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 250V |
| Current - Continuous Drain (Id) @ 25°C: | 33A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | -- |
| Vgs (Max): | ±30V |
| FET Feature: | -- |
| Power Dissipation (Max): | 2.23W (Ta), 40W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220FM |
| Package / Case: | TO-220-3 Full Pack |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RCX330N25 is a single FET N-Channel MOSFET optimized for high frequency switching applications. It has a drain current rating of 330A and a 20V drain-source breakdown voltage rating of 20V max. It has a low on-resistance of 0.0028 Ohm, which allows the maximum current with less heat generation and a fast switching frequency performance. The RCX330N25 can be used in a wide range of applications such as motor control, dc-dc converters, relay-driver and so on.
The RCX330N25 is a N-Channel MOSFET that relies on a MOS field effect of a dioxide layer made of silicon on a substrate. This layer consists of an insulating layer of silicon dioxide and a semiconductive layer of a metal oxide semiconductor (MOS). The gate of the MOSFET is connected to the MOS layer where a gate voltage can be applied to turn the MOSFET ON or OFF. When a gate voltage is applied, it gives a certain amount of charge to the insulating layer and therefore creates an electrical field between the source and drain of the MOSFET. This field creates a conducting path between the source and drain, so that a current can flow from the source to the drain and vice versa.
In a high frequency switching application, the RCX330N25 is used mainly for two purposes: to switch a load on or off quickly, and to vary the amount of current flowing to the load. When a gate voltage is applied, the MOSFET is turned on, allowing current to flow from the source to the drain. This can be used to turn a load connected to the drain on or off quickly. By changing the amount of gate voltage applied, the MOSFET can also be used to adjust the amount of current flowing to a load. This can be useful in applications such as motor control, where the speed of the motor can be adjusted by controlling the current flowing to the motor.
The RCX330N25 is a very versatile device because of its low on-resistance and fast switching frequency performance. It can be used in a wide range of applications due to its high drain current capability and superior switching frequency performance. Its low on-resistance also ensures less power loss and higher efficiency when used in motor control, dc-dc converters, or any other application where a fast, accurate switching is required. Thus, the RCX330N25 can be used in a wide range of transistor-based applications.
The specific data is subject to PDF, and the above content is for reference
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...