Allicdata Part #: | RCX510N25-ND |
Manufacturer Part#: |
RCX510N25 |
Price: | $ 3.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 250V 51A TO-220FM |
More Detail: | N-Channel 250V 51A (Ta) 40W (Tc) Through Hole TO-2... |
DataSheet: | RCX510N25 Datasheet/PDF |
Quantity: | 907 |
1 +: | $ 3.08070 |
10 +: | $ 2.75310 |
100 +: | $ 2.25754 |
500 +: | $ 1.82806 |
1000 +: | $ 1.54174 |
Rds On (Max) @ Id, Vgs: | -- |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±30V |
Vgs(th) (Max) @ Id: | -- |
Series: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 51A (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Bulk |
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RCX510N25 is a type of single transistor, which can be classified into FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). FETs are unipolar devices, which means that they are composed of one type of charge carrier. On the other hand, MOSFETs are bipolar electronic devices, according to which electric current flows through two distinct types of charge carriers.
RCX510N25 is a MOSFET, characterized by its high-power transistor capability and strong high-frequency characteristics. It is specially designed to provide high gain and low gate leakage current. It is suitable for power switching applications such as switching DC/AC converters, relay coils, high-frequency thyristors and more. Additionally, RCX510N25 can be used as a switching element to improve the performance of multimedia audio/video products, LED lighting and LED displays.
The working principle of RCX510N25 is based on semiconductor switch between the drain-source region and the gate of the transistor. This transistor contains three distinct terminals: source, gate and drain, each controlling the flow of electric current between the source and drain. During operation, the gate applied voltage induces an electric field in the channel region, which enables controlling the source-drain current. RCX510N25 can be used either as an enhancement-type or Depletion-type transistor depending on a particular application.
For the enhancement-type operation, the gate-source voltage adjusted to an appropriate value, while the source-drain transistor remains off. When the applied gate voltage exceeds the threshold voltage, the depletion-type transistor turns on and the current flows between the drain and source as long as the gate is applied. After the gate voltage is removed, the transistor turns off.
The RCX510N25 offers excellent thermal stability, making it an ideal choice for applications that require prolonged switching cycles, such as PWM (Pulse Width Modulation) motor and LED lighting applications. It is also suitable for low-voltage applications, where its low gate leakage current works to protect circuits from destruction. Additionally, the RCX510N25 is characterized by its high-frequency response and minimal noise, making it suitable for switching-mode power supplies and other complex electronic equipment.
In conclusion, the RCX510N25 single transistor is suitable for a range of switching applications. It offers high power and high frequency capabilities, as well as excellent thermal stability, making it ideal for use in PWM and LED lighting applications. Additionally, its low gate leakage current provides extra protection for circuits. As a result, RCX510N25 is an excellent choice for those who need high performance and reliable switching in their applications.
The specific data is subject to PDF, and the above content is for reference
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