RD3S100CNTL1 Discrete Semiconductor Products |
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Allicdata Part #: | RD3S100CNTL1TR-ND |
Manufacturer Part#: |
RD3S100CNTL1 |
Price: | $ 0.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NCH 190V 10A POWER MOSFET |
More Detail: | N-Channel 190V 10A (Tc) 85W (Tc) Surface Mount TO-... |
DataSheet: | RD3S100CNTL1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.61619 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 182 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 190V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RD3S100CNTL1 is a single P-channel MOSFET manufactured by ROHM ELECTRONICS, which has fast switching capabilities with an on-resistance of only 3.3 milliohm at 10V. Because of its low on-resistance, it can be used in a wide range of applications such as load control, power motor control, power management for notebook and tablet PCs, LED lighting control and DC/DC conversions. In addition, it can also be used for battery protection applications.
The RD3S100CNTL1 is characterized by its low on-resistance, fast switching times and low gate-source capacitance. It is also very small in size, measuring just 1.17mm x 0.94mm. This makes it ideal for use in compact designs and applications where space is limited.
The RD3S100CNTL1 is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is essentially a transistor that is used to regulate the flow of current between two points, such as between a power supply and a load or instrument. The MOSFET works by using a voltage signal that is applied to its gate terminal to control the flow of current through a conducting channel between its source and drain terminals.
The RD3S100CNTL1 is a P-channel MOSFET, meaning that its conducting channel is composed of P-type semiconductor material. When positive voltage is applied to the gate terminal, it causes electrons to be attracted to the conducting channel, thus creating a current path between the source and drain terminals. When the voltage signal is removed, the electrons are repelled, thus interrupting the current flow.
Because of its fast switching times, low on-resistance and low gate-source capacitance, the RD3S100CNTL1 is ideally suited for use in a wide range of applications. It can be used in load control applications, such as controlling the voltage or current of a DC motor, as well as power management applications, such as providing power management in notebook and tablet PCs. It can also be used in LED lighting control and DC/DC conversion applications, as well as battery protection.
The RD3S100CNTL1 is a versatile device that offers a number of advantages, making it ideal for use in many different applications. Thanks to its low on-resistance, fast switching times and low gate-source capacitance, it provides efficient and reliable performance. In addition, its small size makes it well suited for use in compact designs, as well as applications where space is limited. As such, it is no wonder why the RD3S100CNTL1 has become a popular choice for many electronics engineers.
The specific data is subject to PDF, and the above content is for reference
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