RD3T050CNTL1 Discrete Semiconductor Products |
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| Allicdata Part #: | RD3T050CNTL1TR-ND |
| Manufacturer Part#: |
RD3T050CNTL1 |
| Price: | $ 0.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | NCH 200V 5A POWER MOSFET |
| More Detail: | N-Channel 200V 5A (Tc) 29W (Tc) Surface Mount TO-2... |
| DataSheet: |  RD3T050CNTL1 Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.33675 |
| Vgs(th) (Max) @ Id: | 5.25V @ 1mA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 29W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 760 mOhm @ 2.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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RD3T050CNTL1 Application Field and Working Principle
RD3T050CNTL1 is a semiconductor component belonging to the transistors-field effect transistors (FETs)-single category. It has a MOSFETs function, and it is a single type component. It belongs to the Toshiba RD family, which is a high-performance FET series. RD3T050CNTL1 is suitable for most general purposes for FETs, such as analog circuit and digital circuit of communication, general power supplies, home appliances and appliances, industrial machinery, and automotive equipment.
The RD3T050CNTL1 component has a long gate and source length. This type of gate and source length allows the component to gain a high impedance gate and source current. The component also has a maximum drain current of 150A, making it an ideal choice for applications involving high power and current. The maximum breakdown voltage of the component is 60V with a maximum gate-source voltage of 20V.
In terms of its working principle, RD3T050CNTL1 can be thought of as a switch when it is applied in digital circuits. When a signal is sent to the gate, it allows the transfer of a current (or current flow) from the source to the drain depending on the polarization of the source. In this way, RD3T050CNTL1 can be used to turn a device on or off, or for more complex operations such as logic gates, pulse modulation, and signal amplification.
RD3T050CNTL1 is a highly stable component and can operate in temperatures ranging from -55°C to 150°C. This stability makes it an ideal choice for applications that require long-term reliability and stability, such as in medical, aviation, and defense applications.
Overall, RD3T050CNTL1 is an excellent choice for general-purpose FETs applications due to its long gate and source length, maximum drain current, and high stability. It is also very easy to use and can be integrated into a variety of circuits. Additionally, its low cost makes it an even more attractive choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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