RD3U060CNTL1 Discrete Semiconductor Products |
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Allicdata Part #: | RD3U060CNTL1TR-ND |
Manufacturer Part#: |
RD3U060CNTL1 |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NCH 250V 6A POWER MOSFET |
More Detail: | N-Channel 250V 6A (Tc) 52W (Tc) Surface Mount TO-2... |
DataSheet: | RD3U060CNTL1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.39659 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 840pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 530 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RD3U060CNTL1 is an efficient precision low side driver. It is commonly used in automotive applications, refrigerators, elevators and industrial machinery, among many others. It features reverse voltage protection against undervoltage lockouts and short-circuits, along with adjustable current limit and wide operating temperature range. RD3U060CNTL1 is part of the control electronics family by ROHM Semiconductor. This is a single N-channel MOSFET with a logical voltage level as low as 1.6 V.
RD3U060CNTL1 is a field-effect transistor which falls into the category of single n-channel MOSFET. Field-effect transistors, in general, are four-layer semiconductor devices that have a channel. It works by controlling the voltage applied to a gate to control the current flow between the source and the drain. MOSFET stands for Metal-Oxide-Semiconductor Field-Effect Transistor and it can be used for amplifying or switching electronic signals.
This N-channel transistors differs from P-channel transistors, in that the charge carriers are negatively charged electrons. They are used in the applications demanding high voltage, current and temperature ratings. The working of RD3U060CNTL1 is based on the flow of electrons through a channel between the source and the drain, with their conduction being determined by the value of the gate-to-source voltage. The gate is insulated from the channel and voltage applied here allows the control of electron flow.
In addition to that, RD3U060CNTL1 features a logic-level gate threshold so if the voltage is below this level, the current flow will be blocked. This reverse protection is handy in automotive applications and industrial machinery. Further the slow start-up circuit helps to protect the system from overloading during high current situations.
The RD3U060CNTL1 has been designed to sit between the battery and the load. It provides current drive to the load while protecting the power supply against overcurrent, overheating and short-circuiting. This driver is also equipped with integrated charge pump which allows operation at voltages as low as 1.6 V. It features adjustable current-limit (50A to 300A) as this allows for precise current flow for precise operation of the load.
In summary, RD3U060CNTL1 is an efficient and powerful single N-channel MOSFET. It provides precise control and current drive to the load while protecting system from overcurrent and overvoltage. It is commonly used in automotive applications, elevators, refrigerators and industrial machinery. This device allows for precise current drive for precise operation of the load. Moreover, its reverse voltage protection allows for system protection against undervoltages and short-circuits.
The specific data is subject to PDF, and the above content is for reference
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