| Allicdata Part #: | RDN050N20FU6-ND |
| Manufacturer Part#: |
RDN050N20FU6 |
| Price: | $ 0.63 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 200V 5A TO-220FN |
| More Detail: | N-Channel 200V 5A (Ta) 30W (Tc) Through Hole TO-22... |
| DataSheet: |  RDN050N20FU6 Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 0.56851 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FN |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 292pF @ 10V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 18.6nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 720 mOhm @ 2.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Bulk |
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The RDN050N20FU6 is a key component in the wide range of transistors and field effect transistors (FETs). This particular type of single MOSFET is known for its robust performance, reliability, and quality.
This type of MOSFET is used in many different types of applications, including: automotive, computer systems, consumer electronics, industrial, medical and communications systems. In these applications, RDN050N20FU6 is expected to operate at relatively low power levels and its high current carrying capacity is especially noteworthy.
The working principle of the RDN050N20FU6 is based on the basic principles of physics. This type of MOSFET is able to efficiently regulate the flow of current and power in the same way that any other type of transistor does.
When a voltage is applied to the gate terminal, it causes a majority carrier (either holes or electrons) to enter the gate oxide layer. This breaks the otherwise homogeneous field and results in the depletion region. Through this process, the current flow between the source and drain terminals is regulated.
The MOSFET has an inherent voltage drop caused by the depletion region and the engineered physical properties of the substrate. This manufactured structure ensures that the current flow is controlled in a satisfactory way.
The RDN050N20FU6 has been designed to work over a range of operating conditions, including the switching of DC power, the regulation of low-noise signals, and the transmission of RF power. This type of MOSFET works efficiently in a variety of extreme conditions, including high temperature and high pressure, and is characterized by low on-state resistance and high switching speeds.
In order to ensure that all specifications are met, the RDN050N20FU6 has been subjected to comprehensive tests, including static and dynamic tests. As a result, all these tests show that the device is reliable, robust and highly efficient.
The RDN050N20FU6 is an excellent choice for a wide range of applications, including automotive, computer, consumer electronics, industrial, medical and communications systems. Thanks to its robust performance and superior quality, the RDN050N20FU6 is the ideal solution for most FET applications.
The specific data is subject to PDF, and the above content is for reference
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