RDX120N50FU6

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The RDX120N50FU6 is an N-channel enhancement-mode Field Effect Transistor (FET). It is a power MOSFET device engineered particularly for switch mode power supplies (SMPSs) that require tight tracking specifications. This power MOSFET is offered with a drain-to-source voltage rating of 120 volts and a drain current rating of 50 amperes. In practice, its specifications can be further adjusted to suit applications at even higher voltage and current levels. Due to its special design and construction, the RDX120N50FU6 is a very efficient power FET with respect to cost, heat dissipation, size, and ruggedness.

This device can be used for a wide variety of applications. It is suitable for medium- to high-power switching operations, such as in the control of DC motors, in switching linear and switching power supplies, and in other power electronics circuit designs. The RDX120N50FU6 is a reliable and cost-effective solution for applications in these and other industries. Other typical uses include power conditioning, audio systems, and for DC-to-DC converters.

The RDX120N50FU6 works on the principle of voltage-controlled current conduction. It has four terminals, namely the source, the drain, the gate and the substrate. When the gate terminal is activated, the transistor experiences a positive voltage drop, allowing current to flow easily between the source and drain terminals. This current flow is regulated by the gate voltage and can be used to control the power output of the device. The gate current is determined by the voltage applied at the gate terminal and the substrate design of the device.

This device consists of an insulated HEXFET® power MOSFET, integrated onto a single monolithic structure. The use of advanced HEXFET® silicon technology allows for very low on-state resistance (RDSon) and very low power loss while maintaining superior switching speed and improved circuit switching performance. The integrated structure allows for superior performance and high reliability. The RDX120N50FU6 is capable of operating at high-switching frequencies, ensuring improved regulation and output accuracy over a wide range of operating temperatures.

The RDX120N50FU6 is a reliable and cost-effective power FET that has been developed specifically for medium to high power switching applications. It is suitable for use in most applications where there is a need for efficient, high-speed switching. Its integrated design and advanced HEXFET silicon technology make it a superior device for many applications. It is a reliable and efficient solution for a variety of applications, offering improved performance, power loss reduction, low EMI, and improved circuit switching.

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