RE1E002SPTCL Discrete Semiconductor Products |
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Allicdata Part #: | RE1E002SPTCLTR-ND |
Manufacturer Part#: |
RE1E002SPTCL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 30V 0.25A EMT3 |
More Detail: | P-Channel 30V 250mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | RE1E002SPTCL Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 30pF @ 10V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 250mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 250mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A RE1E002SPTCL field effect transistor (FET) is a three terminal electronic component which is used to control a small current with a large current, making it a highly efficient device. The major applications of this type of FETs are power conversion, audio amplifiers, radio frequency (RF) amplifiers, and switch mode power supplies. This FET also has a low voltage rating and is able to switch on and off at relatively low gate voltages.
The FETs are classified into two basic subgroups: bipolar junction field effect transistors (BJFETs) and metal oxide semiconductor field effect transistors (MOSFETs). The RE1E002SPTCL transistor is a single MOSFET device. The single MOSFETs are widely used in both digital and analog circuits, with the main advantages being their low input bias currents compared to BJFETs and their high input impedance.
The RE1E002SPTCL transistor is a vertical double N-channel enhancement mode MOSFET. The metal oxide gate is applied with a PN junction structure, with 5-volt regulated voltage built into the drain pin. It has low on-resistance, low input capacitance, and a very low gate-source threshold voltage. This transistor is designed to operate at high frequencies and can be used in various electronic circuit applications.
The working principle of an MOSFET is quite simple. It acts like an electronic switch when the gate voltage is applied. When no gate voltage is applied, the electrical resistance between the drain and source terminals is very high (amperes). However, when a voltage source is applied to the gate, the resistance between the drain and source terminals decreases and the transistor enables current to flow between the drain and source, allowing the switching of the current through the device.
The RE1E002SPTCL transistor has a variety of applications. It can be used in digital to analog converters (DACs), pulse width modulation (PWM) circuits, DC-DC converters, and other power circuit applications. It can also be used for switching and amplifying in many audio circuits and to produce variable gain amplifier (VGA) signals for RF and microwave applications.
In conclusion, the RE1E002SPTCL field effect transistor is a low voltage single MOSFET device which has a wide range of applications in both analog and digital circuits. Its working principle is simple, allowing it to be used as an electronic switch when a voltage source is applied to the gate. The combination of its low voltage rating, low on-resistance, and low input capacitance makes it an ideal choice for many circuit applications.
The specific data is subject to PDF, and the above content is for reference
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