RE1L002SNTL Discrete Semiconductor Products |
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Allicdata Part #: | RE1L002SNTLTR-ND |
Manufacturer Part#: |
RE1L002SNTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 60V 250MA EMT3F |
More Detail: | N-Channel 60V 250mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | RE1L002SNTL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.4 Ohm @ 250mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 250mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Reliability and durability are two of the most important aspects of any electronics system. To ensure these two qualities, certain components and systems must be designed and constructed properly. One such component, the RE1L002SNTL, is a single transistor with specific features and features designed for reliable operation. In this article, we\'ll take a closer look at the applications and working principles of the RE1L002SNTL transistor.
The RE1L002SNTL is a single N-channel enhancement-mode vertical DMOS transistor designed for enhanced reliability and durability. It is formulated from high-conductivity silicon, making it highly efficient and reliable. Its small size and low gate charge allow it to be used in a wide range of applications, including LED strip and LED lamp drivers, voltage regulators, DC-DC converters, and various industrial applications. The RE1L002SNTL is also used widely in automotive and aviation applications, giving it enhanced reliability in these areas.
When it comes to working principles, the RE1L002SNTL functions similarly to a standard MOSFET device. The transistor consists of three terminals (gate, drain, and source) connected to a semiconductor channel. When operating, an electric field is created between the gate and drain that controls the flow of current between the source and drain. The transistor can be used in either enhancement or depletion-mode, depending on the gate-source voltage. With a positive gate-source voltage, the N-channel is opened and the transistor assumes an enhancement-mode, allowing current to flow freely between the source and drain. With a negative gate-source voltage, the N-channel is closed and the transistor assumes a depletion-mode, blocking any flow of current between the source and drain.
The RE1L002SNTL is also designed to be particularly durable. It is designed to withstand high levels of radiation and temperature, and is also designed to be highly resistant to vibration and jostling. Additionally, the device\'s high efficiency allows it to operate with low power consumption. All of these features make the RE1L002SNTL especially suitable for use in applications that require high levels of reliability and durability.
In conclusion, the RE1L002SNTL is a single N-channel enhancement-mode vertical DMOS transistor designed for enhanced reliability and durability. Its small size and low gate charge make it suitable for a wide range of applications, including LED strip and LED lamp drivers, voltage regulators, DC-DC converters, and various industrial applications. Additionally, its high radiation and temperature resistance, as well as its resistance to vibration and jostling, make it especially suitable for use in highly demanding environments. All of these factors combine to make the RE1L002SNTL an ideal choice for applications that require reliable operation and long-term longevity.
The specific data is subject to PDF, and the above content is for reference
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