Allicdata Part #: | RFD3055LE-ND |
Manufacturer Part#: |
RFD3055LE |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 11A I-PAK |
More Detail: | N-Channel 60V 11A (Tc) 38W (Tc) Through Hole TO-25... |
DataSheet: | RFD3055LE Datasheet/PDF |
Quantity: | 2832 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 107 mOhm @ 8A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
In electronics, the amount of current passing through a component is an important consideration when selecting the appropriate component. This is especially pertinent when it comes to transistors. In many applications, the resistance of a single transistor is just too low to offer the desired amount of current. To overcome this, multiple transistors or transistor arrays may be used. One practical example of a such a device is the RFD3055LE, a single-transistor array designed for high-power applications. In this article, we will take a look at the application field and working principle of the RFD3055LE.
Application Field
The RFD3055LE is designed for use in high-power applications, such as transistors and high-power chips. It is ideal for use in applications where a high-power transistor is needed to control high-current circuitry, as it offers extremely low resistance.
Its integration of a single-transistor array into a single package makes it a cost-effective solution, as compared to using multiple individual transistors. It is also small and lightweight, ideal for applications where size and weight are key considerations.
The RFD3055LE is a versatile device, and is suitable for use in a wide range of applications. Its ability to be configured in different ways, as well as its integrated features, makes it a great choice for many applications.
Working Principle
The RFD3055LE is a single-transistor array. It is specifically designed to control the amount of current passing through a circuit. The device works by controlling the negative feedback in the circuit. When the transistor is turned on, the negative feedback is increased and the current passing through the circuit is decreased. When the transistor is turned off, the negative feedback is decreased and the current passing through the circuit is increased.
The device is operated by two control signals, the gate voltage and the drain voltage. The gate voltage is used to control the amount of current passing through the drain, while the drain voltage controls the amount of current passing through the substrate. When the gate and drain voltages are both at a low level, the device is in the "off" state. When the gate voltage is applied, the device is turned on and current begins to flow.
Using the RFD3055LE
The RFD3055LE is ideal for use in applications which require the control of high-power circuitry. It is designed to handle large amounts of current, and its integrated features make it an easy-to-use solution. The device is also highly configurable, and can be used to create complex circuitry with ease.
When using the RFD3055LE, it is important to ensure that the gate and drain voltages are both set to the correct levels and that the transistor is adequately cooled. This will ensure that the device is operated safely, and that it is able to provide maximum performance.
Conclusion
The RFD3055LE is a single-transistor array designed for high-power applications. Its ability to control high-power circuitry with low resistance makes it an ideal solution for many applications. Its small size, lightweight build and configurability also make it a great choice for many applications. By controlling the gate and drain voltages, the RFD3055LE can be used to control a wide range of circuits and allow for complex circuitry to be created.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RFD3055SM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 12A DPAKN... |
RFD3055 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 12A IPAKN... |
RFD3055SM9A | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 12A DPAKN... |
RFD3055LESM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 11A TO-25... |
RFD3055LESM9A | ON Semicondu... | 0.19 $ | 1000 | MOSFET N-CH 60V 11A TO-25... |
RFD3055LE | ON Semicondu... | -- | 2832 | MOSFET N-CH 60V 11A I-PAK... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...