Allicdata Part #: | RFP22N10-ND |
Manufacturer Part#: |
RFP22N10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 22A TO-220AB |
More Detail: | N-Channel 100V 22A (Tc) 100W (Tc) Through Hole TO-... |
DataSheet: | RFP22N10 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 20V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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The RFP22N10 is a Power MOSFET, or metal oxide semiconductor field effect transistor (MOSFET). It is a voltage-controlled electronic switch that is widely used in many different fields of application. The RFP22N10 device features an internal charge pump that supplies 10V gate-to-source (VGS) bias. It also has an enhanced RDS(ON), a lower VTH and a thermal shutdown feature for protection.
Application Field
The RFP22N10 is well-suited for numerous applications across the electronic industry, such as automotive systems, consumer electronics, and biomass power systems. In particular, it is used in inverter-based applications such as motor drives, chargers, and power converters, as well as in high-reliability aerospace and military applications. The RFP22N10 can also be used in industrial settings, as it is capable of controlling high currents and voltages. The device is also suitable for use in high-frequency switching applications and as a starting device in DC-DC converters.
Working Principle
The working principle of the RFP22N10 is based on the MOSFET transistor principle of operation. A MOSFET is made up of two parts: the gate and the channel. The gate is electrically insulated from the channel by a thin gate oxide layer and is used to control the current that flows through the MOSFET. A voltage applied to the gate will cause a field to build which in turn causes charge carriers to accumulate at the interface between the gate and the channel. This accumulation of charge carriers is called the inversion layer and is what allows current to flow through the MOSFET.
When a positive gate voltage is applied, it acts to create a conducting channel between the source and the drain of the MOSFET. This current is able to flow through the MOSFET due to an electron flow or majority carriers created within the channel. When a negative gate voltage is applied, it decreases the electron flow and hence reduces the current that flows through the MOSFET. This is how the RFP22N10 is able to control the large currents and voltages.
Conclusion
The RFP22N10 is a highly versatile device, with a wide range of applicable uses. It is often used in automotive systems, consumer electronics, and industrial settings for controlling large currents and voltages. The MOSFET principle of operation allows the RFP22N10 to efficiently control these currents and voltages via an inversion layer and electron flow. The RFP22N10 can be used in all environments that require power control in order to maximize efficiency, and the device\'s impressive specs make it the first choice for many professionals.
The specific data is subject to PDF, and the above content is for reference
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