RFP50N06 Allicdata Electronics
Allicdata Part #:

RFP50N06-ND

Manufacturer Part#:

RFP50N06

Price: $ 1.25
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 50A TO-220AB
More Detail: N-Channel 60V 50A (Tc) 131W (Tc) Through Hole TO-2...
DataSheet: RFP50N06 datasheetRFP50N06 Datasheet/PDF
Quantity: 746
1 +: $ 1.14030
10 +: $ 1.00737
100 +: $ 0.79607
800 +: $ 0.53940
1600 +: $ 0.48741
Stock 746Can Ship Immediately
$ 1.25
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 131W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 20V
Series: --
Rds On (Max) @ Id, Vgs: 22 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The RFP50N06 is a N-channel enhancement-mode Field-Effect Transistor (FET) manufactured by Vishay Semiconductors, featuring a drain current rating of 50A and a drain-source cutoff voltage of 54V. With its low on-state resistance and relatively high input capacitance, the RFP50N06 is ideal for use in applications where power efficiency, low noise and low power dissipation are key requirements.

The device is an enhancement-mode FET, which means that it utilizes an insulated gate to control the current flowing through the device. When an electric field is applied across the gate, the mobility of electrons increases in the channel, providing a path for current to flow. This allows the gate voltage to control the desired power level, and to turn on or off the device as needed.

The RFP50N06 is primarily used in applications that require low on-state resistance and relatively high input capacitance. Examples of such applications include, but are not limited to, master/slave power supplies and UPS systems, automotive body controls, processor power supplies, and DC-DC converters. However, the device can be used in any application that requires low power consumption and high current capabilities.

The Vishay RFP50N06 is among the most efficient of all enhancement-mode FETs on the market today. Its low on-state resistance (RDSon) helps to reduce the amount of power lost in the channel and increase efficiency. Additionally, the device\'s relatively high input capacitance allows it to respond quickly to changes in signal voltage. This can be especially useful in applications where fast response times are necessary.

The device’s relatively low gate-source threshold voltage (VGS) is also beneficial, as it allows the device to switch on or off in just a few nanoseconds. This makes the device suitable for applications that require fast switching, such as switch-mode power supplies. Additionally, the device has an operating temperature range of -40 degrees Celsius to +85 degrees Celsius, which makes it suitable for a wide range of applications.

In conclusion, the Vishay RFP50N06 is a versatile and efficient N-channel enhancement-mode FET. With its low on-state resistance and relatively high input capacitance, the device is ideal for a variety of applications, including master/slave power supplies, automotive body controls, processor power supplies, and DC-DC converters. Additionally, the device’s relatively low gate-source threshold voltage allows it to switch on or off in just a few nanoseconds, making it suitable for applications requiring fast switching.

The specific data is subject to PDF, and the above content is for reference

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