Allicdata Part #: | RFP50N06-ND |
Manufacturer Part#: |
RFP50N06 |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 50A TO-220AB |
More Detail: | N-Channel 60V 50A (Tc) 131W (Tc) Through Hole TO-2... |
DataSheet: | RFP50N06 Datasheet/PDF |
Quantity: | 746 |
1 +: | $ 1.14030 |
10 +: | $ 1.00737 |
100 +: | $ 0.79607 |
800 +: | $ 0.53940 |
1600 +: | $ 0.48741 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 131W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2020pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RFP50N06 is a N-channel enhancement-mode Field-Effect Transistor (FET) manufactured by Vishay Semiconductors, featuring a drain current rating of 50A and a drain-source cutoff voltage of 54V. With its low on-state resistance and relatively high input capacitance, the RFP50N06 is ideal for use in applications where power efficiency, low noise and low power dissipation are key requirements.
The device is an enhancement-mode FET, which means that it utilizes an insulated gate to control the current flowing through the device. When an electric field is applied across the gate, the mobility of electrons increases in the channel, providing a path for current to flow. This allows the gate voltage to control the desired power level, and to turn on or off the device as needed.
The RFP50N06 is primarily used in applications that require low on-state resistance and relatively high input capacitance. Examples of such applications include, but are not limited to, master/slave power supplies and UPS systems, automotive body controls, processor power supplies, and DC-DC converters. However, the device can be used in any application that requires low power consumption and high current capabilities.
The Vishay RFP50N06 is among the most efficient of all enhancement-mode FETs on the market today. Its low on-state resistance (RDSon) helps to reduce the amount of power lost in the channel and increase efficiency. Additionally, the device\'s relatively high input capacitance allows it to respond quickly to changes in signal voltage. This can be especially useful in applications where fast response times are necessary.
The device’s relatively low gate-source threshold voltage (VGS) is also beneficial, as it allows the device to switch on or off in just a few nanoseconds. This makes the device suitable for applications that require fast switching, such as switch-mode power supplies. Additionally, the device has an operating temperature range of -40 degrees Celsius to +85 degrees Celsius, which makes it suitable for a wide range of applications.
In conclusion, the Vishay RFP50N06 is a versatile and efficient N-channel enhancement-mode FET. With its low on-state resistance and relatively high input capacitance, the device is ideal for a variety of applications, including master/slave power supplies, automotive body controls, processor power supplies, and DC-DC converters. Additionally, the device’s relatively low gate-source threshold voltage allows it to switch on or off in just a few nanoseconds, making it suitable for applications requiring fast switching.
The specific data is subject to PDF, and the above content is for reference
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...