| Allicdata Part #: | RFP70N03-ND |
| Manufacturer Part#: |
RFP70N03 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 70A TO-220AB |
| More Detail: | N-Channel 30V 70A (Tc) Through Hole TO-220AB |
| DataSheet: |  RFP70N03 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
| Rds On (Max) @ Id, Vgs: | 10 mOhm @ 70A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 25V |
| FET Feature: | -- |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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The RFP70N03 is a high performance N-channel enhancement MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is used in a variety of applications including power control, motor control, computer and peripherals, switching power supplies and many more.
A MOSFET is an insulation-gate field-effect transistor (IGFET) with an insulated gate providing either enhancement or depletion between the drain and source. It consists of three layers of semiconductor material, with two terminals (the source and drain) located in the middle layer, and the third terminal (the gate) on the top layer. When no voltage is applied to the gate, the MOSFET acts as an open circuit.
RFP70N03 is an N-channel MOSFET with a drain-source breakdown voltage of 60V. It has a high peak output current of 70A, an on-state resistance of 0.007 ohm, and is offered in a TO-220AB package. The RFP70N03 has a maximum current density of 380A/cm2, making it ideal for high current applications.
The RFP70N03 provides low on-state resistance and fast switching. It offers a wide range of applications including high speed switching, power control, motor control, computers and peripherals, switching power supplies and audio amplifiers. The device is designed to handle large amounts of power efficiently with low heat generation and distortion. It also offers excellent reliability and good EMI (electromagnetic interference) protection.
The RFP70N03 works by using voltage applied to the gate to control the flow of current between the source and drain. The gate voltage sets up a field that makes it easier or harder for current to flow between the drain and source. When the gate voltage is low, the MOSFET behaves like an open circuit and no current flows. When the gate voltage is high, the MOSFET acts like a short circuit and current flows. This makes the MOSFET ideal for switching and controlling power.
The RFP70N03 is a versatile and reliable MOSFET device that can be used in a wide range of applications. It offers excellent performance, low power dissipation, and good switching speeds. It is suitable for high current applications, such as power and motor control, switching power supplies and audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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