RHK003N06T146 Allicdata Electronics

RHK003N06T146 Discrete Semiconductor Products

Allicdata Part #:

RHK003N06T146TR-ND

Manufacturer Part#:

RHK003N06T146

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 60V 300MA SOT-346
More Detail: N-Channel 60V 300mA (Ta) 200mW (Ta) Surface Mount ...
DataSheet: RHK003N06T146 datasheetRHK003N06T146 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 200mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The RHK003N06T146 is an isolated high-efficiency MOSFET. This device is designed to provide high current flow, low noise and high efficiency in a wide variety of applications. It is suitable for applications ranging from audio and power amplification to switching circuits and motor control.

The RHK003N06T146 is a high power-average-rated component that offers high efficiency and low heat dissipation. It features a high current carrying capacity, low noise, and low RDS(on) resistance. It is also rated at a very low total-gate charge, giving it a low input capacitance requirement.

The RHK003N06T146 can be used for a variety of purposes such as switching and amplifier circuits and motor control. Its high power rating, fast switching speed and low power dissipation make it ideal for high-frequency and high-power applications. It also has an excellent linearity and low switching losses.

The working principle behind the RHK003N06T146 is the same as for other MOSFET devices. Its high voltage rating and exceptional current carrying capacity make it suitable for use in applications that require high voltage switching at high currents. The RHK003N06T146 operates by applying a voltage to the gate, which opens up the channel at the source, allowing current to flow.

The RHK003N06T146 is built with an advanced internal construction that yields a very competant device. It has a special design that ensures minimal channel resistance and provides low gate leakage current. The device has an additional feature that allows it to be used in a variety of applications, including power conversion, motor control, and other power electronics. The RHK003N06T146 also offers protection against overvoltage and ESD (Electrostatic Discharge) events.

In conclusion, the RHK003N06T146 is a high-efficiency, high-performance MOSFET that is perfect for applications like power conversion, motor control and other power electronics. It is designed for low power dissipation, low noise, and high efficiency usage. The RHK003N06T146 is also highly reliable, has an advanced gate structure and offers many other features too. It is an ideal solution for power requirements in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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