RHP020N06T100 Discrete Semiconductor Products |
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Allicdata Part #: | RHP020N06T100TR-ND |
Manufacturer Part#: |
RHP020N06T100 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 60V 2A SOT-89 |
More Detail: | N-Channel 60V 2A (Ta) 500mW (Ta) Surface Mount MPT... |
DataSheet: | RHP020N06T100 Datasheet/PDF |
Quantity: | 27000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RHP020N06T100 is a 100V rated MOSFET, which is typically used in high power applications such as power drives, high voltage converters, and inductive loads. It is a single N-channel MOSFET with a lower resistance (20mΩ at 25°C) than many comparable transistors, making it suitable for applications with high power consumption and/or substantial heat dissipation. The high-voltage MOSFET is designed to deliver superior performance and reliable power switching.
Application Field
Due to its low on-state resistance and high off-state resistance, the RHP020N06T100 is an excellent choice for applications such as high-efficiency power supplies, motor control, DC-DC converters, and pulse-width modulation (PWM). Its low resistance and high current capacity (up to 75A) make it ideal for high-current, power-hungry applications. It is also commonly used for applications that require variable voltage, speed or current control.
The RHP020N06T100 is a popular choice for high-voltage applications that require high switch speeds and high accuracy. Applications such as servo motors, high-precision current sources, and high-voltage soft start circuits all benefit from the precision of the RHP020N06T100. The high switching speed and low on-state resistance combines to reduce switching losses and improve system reliability. Additionally, the device’s N-channel MOSFET structure allows for ESD ratings as high as +2kV.
Working Principle
The RHP020N06T100 works by controlling current flow between the drain and source terminals. When a gate-source voltage is applied, an electric field forms between the gate and source region, allowing current to flow through the MOSFET channel and from drain to source. When the gate voltage is removed, the field is no longer present and the current stops flowing, turning the MOSFET off.
The RHP020N06T100 has several different configurations and characteristics, including a high-speed switching capability, low input capacitance, low junction capacitance and low On resistance. The low On resistance ensures the MOSFET can effectively handle high currents, while the low input capacitance ensures high switching speeds. The junction capacitance allows the device to handle substantial power dissipation.
The RHP020N06T100 is a highly reliable device that is ideal for high power applications. It has a highly efficient design, allowing it to handle large currents and high voltages with minimal power dissipation. It is also capable of high-speed switching, making it suitable for applications that require precise speed control.
The specific data is subject to PDF, and the above content is for reference
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