RHU003N03FRAT106 Allicdata Electronics

RHU003N03FRAT106 Discrete Semiconductor Products

Allicdata Part #:

RHU003N03FRAT106TR-ND

Manufacturer Part#:

RHU003N03FRAT106

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: 4V DRIVE NCH MOSFET (CORRESPONDS
More Detail: N-Channel 30V 300mA (Ta) 200mW Surface Mount UMT3
DataSheet: RHU003N03FRAT106 datasheetRHU003N03FRAT106 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.04333
Stock 3000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V
FET Feature: --
Power Dissipation (Max): 200mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UMT3
Package / Case: SC-70, SOT-323
Description

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The RHU003N03FRAT106 is a highly stable and efficient single-channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It provides excellent performance in a wide range of applications, such as automotive, industrial, and telecommunications systems. The device is capable of delivering high power, low on-resistance, and excellent thermal conductivity, making it a great choice for a range of applications.

The MOSFET is typically used for power switching when high current and low on-resistance is required. The device is a single-channel MOSFET, which means it has a single gate control input. The single-channel MOSFET design is highly reliable and can be used in a variety of applications.

The RHU003N03FRAT106 is suitable for various power conversion applications such as AC to DC, DC to AC, and DC to DC converters. The device operates at a voltage range of 0-600V and is capable of delivering high power up to 450W. It has high switching speed and low on-resistance, making it suitable for applications requiring fast or precise control. The device also features a built-in protection against over-temperature and over-current, enabling safer operation.

The RHU003N03FRAT106 uses a high-frequency switching scheme that reduces power losses and improves efficiency. Additionally, the device is designed with a high thermal conductivity package, which provides excellent thermal management. It also features a soft switching technology to reduce overshoot and ringing, as well as improve efficiency.

Various types of protection features are incorporated in the RHU003N03FRAT106 to ensure reliable and safe operation. The device includes protection against over-temperature, over-voltage, under-voltage, over-current, and short circuit, as well as monitoring features such as current sense limit and gate driver monitor.

The working principle of the RHU003N03FRAT106 is based on the use of two MOSFETs in a single gate structure. The gate of the two MOSFETs is connected to a single control input, allowing the device to be controlled either as a single-ended or differential device. When the control input is set to a high voltage, the two MOSFETs turn on and carry a current through the device. When the control input is set to a low voltage, the two MOSFETs turn off and the device will not conduct current.

The RHU003N03FRAT106 is a great option for a variety of applications requiring power switching and features high current capability, low on-resistance, and excellent thermal conductivity. The device is designed to deliver high power, while providing reliable and safe operation. The combination of a high-frequency switching scheme, soft switching technology, and protection features make the RHU003N03FRAT106 an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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