RJL6013DPE-00#J3 Allicdata Electronics
Allicdata Part #:

RJL6013DPE-00#J3-ND

Manufacturer Part#:

RJL6013DPE-00#J3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 600V 11A LDPAK
More Detail: N-Channel 600V 11A (Ta) 100W (Tc) Surface Mount 4-...
DataSheet: RJL6013DPE-00#J3 datasheetRJL6013DPE-00#J3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: SC-83
Supplier Device Package: 4-LDPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 810 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RJL6013DPE-00#J3 is a type of single field-effect transistor (FET) that is constructed using silicon and then manufactured by Raytheon Corporation. This particular model is also commonly referred to as Raytheon-Lite MOSFETs, which stands for Metal Oxide Semiconductor FETs.

FETs are semiconductor devices with three terminals. They are used for the control and amplification of electrical signals and this particular type has a voltage-controlled gate and is self-regulating. The RJL6013DPE-00#J3 incorporates a slimline surface-mount technology package to make it accurate and reliable.

One of the main applications of the RJL6013DPE-00#J3 is in power management. The device is designed to manage the voltage levels and currents in power circuits, to ensure continuous operation of electrical and electronic equipment. It can be used in a variety of applications, including audio/video equipment, computer peripheral devices and more.

The RJL6013DPE-00#J3 works on the principle of MOSFETs. In power management, it is an important component that controls voltage and current on the load. The FET creates a low-resistance, semi-conducting path between its terminals, allowing current to flow when the gate is activated. As the gate voltage is increased, the current increases as well. The gate voltage can be adjusted by a digital control signal, point-of-load (POL) regulators or other control systems. This allows a user to adjust the output power, making it suitable for different types of applications.

The RJL6013DPE-00#J3 is a reliable FET, designed to provide reliable performance in medium and high-power applications. It has a maximum drain-source voltage of 2.5V, a maximum drain current of 6.0A and a maximum gate-to-source voltage of 2.0V. It also features low capacitance, high transconductance and high thermal resistance.

This single field-effect transistor is a powerful and versatile device, which can be used in a variety of applications, from audio/video equipment to power management systems. Its slimline surface-mount package ensures accurate and reliable performance, making it an ideal choice for a number of applications.

The specific data is subject to PDF, and the above content is for reference

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