Allicdata Part #: | RJL6013DPE-00#J3-ND |
Manufacturer Part#: |
RJL6013DPE-00#J3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 600V 11A LDPAK |
More Detail: | N-Channel 600V 11A (Ta) 100W (Tc) Surface Mount 4-... |
DataSheet: | RJL6013DPE-00#J3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-83 |
Supplier Device Package: | 4-LDPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 810 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RJL6013DPE-00#J3 is a type of single field-effect transistor (FET) that is constructed using silicon and then manufactured by Raytheon Corporation. This particular model is also commonly referred to as Raytheon-Lite MOSFETs, which stands for Metal Oxide Semiconductor FETs.
FETs are semiconductor devices with three terminals. They are used for the control and amplification of electrical signals and this particular type has a voltage-controlled gate and is self-regulating. The RJL6013DPE-00#J3 incorporates a slimline surface-mount technology package to make it accurate and reliable.
One of the main applications of the RJL6013DPE-00#J3 is in power management. The device is designed to manage the voltage levels and currents in power circuits, to ensure continuous operation of electrical and electronic equipment. It can be used in a variety of applications, including audio/video equipment, computer peripheral devices and more.
The RJL6013DPE-00#J3 works on the principle of MOSFETs. In power management, it is an important component that controls voltage and current on the load. The FET creates a low-resistance, semi-conducting path between its terminals, allowing current to flow when the gate is activated. As the gate voltage is increased, the current increases as well. The gate voltage can be adjusted by a digital control signal, point-of-load (POL) regulators or other control systems. This allows a user to adjust the output power, making it suitable for different types of applications.
The RJL6013DPE-00#J3 is a reliable FET, designed to provide reliable performance in medium and high-power applications. It has a maximum drain-source voltage of 2.5V, a maximum drain current of 6.0A and a maximum gate-to-source voltage of 2.0V. It also features low capacitance, high transconductance and high thermal resistance.
This single field-effect transistor is a powerful and versatile device, which can be used in a variety of applications, from audio/video equipment to power management systems. Its slimline surface-mount package ensures accurate and reliable performance, making it an ideal choice for a number of applications.
The specific data is subject to PDF, and the above content is for reference
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