RMW130N03TB Discrete Semiconductor Products

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RMW130N03TB is an enhancement mode power field-effect transistor (FET) and is commonly used in a variety of power management applications requiring power switching or regulation. It is available in a 3.3 mm WSON (wafer-level surface mounted plastic on-glass) package, providing a cost-effective solution for high-power applications.

The RMW130N03TB offers excellent switching performance, a low drain-source on-resistance, an excellent electrostatic discharge (ESD) rating, and operational temperature range of -55 to 175 degrees Celsius. It can operate up to a maximum current of 20 A and voltage of 30 V, making it suitable for a wide range of power management applications.

Applications for the RWM130N03TB include power supplies, audio power amplifiers, motor control, DC-DC conversion, LED driver circuits, lighting control applications, etc. It is particularly suitable for use in automotive and industrial motor control applications due to its high-current and wide temperature range.

RMW130N03TB utilizes a FET gate drive, which is a combination of a MOSFET (metal-oxide-semiconductor field-effect transistor) and a gate driver circuit. The MOSFET is typically controlled by applying a voltage to its gate terminal, which can turn the device on or off. The gate driver circuit is used to amplify the input signal and provide a higher current drive capability to turn the MOSFET on or off.

When the gate is at a high voltage, the source-drain path of the device is opened and current can flow through the device, turning it on. When the gate voltage is low, the source-drain path is blocked, turning the device off. Since the gate of the MOSFET is isolated from the source-drain path, it can operate at high voltages without suffering from breakdown.

RMW130N03TB also has high levels of robustness and reliability. It is protected against over-current and ESD and also has a low on-state resistance. This makes it suitable for high-power and high-efficiency applications, such as DC-DC conversion, motor control and LED control.

In conclusion, RWM130N03TB is an excellent enhancement mode power field-effect transistor, offering excellent switching performance, low drain-source on-resistance, an ESD rating, and operational temperature range of -55 to 175 degrees Celsius. It is a robust and reliable device, making it suitable for a variety power management applications, such as power supplies, audio power amplifiers, DC-DC conversion and LED driver circuits.

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