RMW280N03TB Discrete Semiconductor Products

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The RMW280N03TB is an enhancement mode N-channel power metal-oxide-semiconductor field-effect transistor (MOSFET). It is part of the series of transistors from Infineon proprietary technologies that provide excellent user experiences under all condition.

RMW280N03TB is an ideal solution for automotive applications, as it offers very low on-resistance and highly efficient operation. This MOSFET is designed to minimize the power losses and extend the battery life by providing superior reliability and excellent thermal performance.

The RMW280N03TB offers numerous advantages, such as high switching speed, low parasitic capacitances, low on-resistance, low gate threshold voltage, low input capacitance and very high efficiency. Furthermore, its superior power handling performance makes it suitable for a wide array of applications – from economical to high-end, allowing users to take full advantage of their main transformer and power supply design options with minimal component count.

The RMW280N03TB features a wide operating temperature range, from -55℃ to +175℃, making it highly reliable and suitable for the toughest automotive applications. This MOSFET also has a good critical rate of dV/dt, which decreases the ringing frequency and improves switching performance.

The application field of the RMW280N03TB covers various sectors, including electric vehicle traction motors, under-hood electric pumps, controlled rectifiers in automotive and non-automotive areas, telecom stations, home appliance control, radio frequency switching and many other applications.

In terms of working principle, the RMW280N03TB is an N-channel MOSFET, meaning it has one n-type gate and two n-type source-drain regions. As such, it can only be used as a normally-closed switch, meaning the path between the source and drain will be open until a positive voltage is applied to the gate. Once this positive voltage is applied, it will create a small electric field, which will in turn attract electrons and form an electric path between the source and drain. This electric path is called an ‘enhanced channel’, and it is through this process that conduction takes place.

The RMW280N03TB MOSFET is a shunt semiconductor device, meaning it provides a way to open or close an electric current path for a certain signal or load. Its output signal is controlled by its input voltage, making it an ideal choice for applications requiring high switching speed and excellent low-temperature performance.

In conclusion, the Infineon RMW280N03TB series MOSFET is an ideal choice for applications requiring a low-resistance, highly efficient yet reliable solution. It offers extensive performance benefits, making it suitable for a wide range of applications in various industries, making it a great option for automotive and consumer electronic applications.

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