RN1101,LF(CT

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The RN1101,LF Single, Pre-Biased Transistor is designed to be used in a wide variety of applications and is used in high-frequency, low-noise amplifiers and oscillators.It is a two-terminal device and is typically operated in the linear region. It is also operated in the semi-saturation and saturation regions. The RN1101, LF is classed as a high-gain transistor and as such is particularly suitable for low-noise and high-frequency applications.

The RN1101, LF is a single-emitter Common Base transistor with a single-base, dual collector structure combined with a floating resistor and a small positive input bias voltage. The collector current is controlled by the base-emitter voltage in the linear region, which is independent of the input current. At low collector currents, the transistor is characterised by an internal current gain of up to 120, so a very small input current can control a large collector current. At high collector currents, the transistor is characterised by a maximum collector-emitter voltage of 0.5V.So, the maximum collector current possible is limited.

The RN1101, LF is useful in a range of applications, including audio amplifiers, high-power power amplifiers, battery operated amplifiers and RF amplifier circuits.It is also used in voltage-controlled oscillators, switching circuits and inverters. It can be used in high-temperature and low noise applications. It also exhibits a wide range of stable and repeatable operation in a variety of temperature and power voltage conditions.

In operation, the RN1101, LF functions as a standard bipolar junction transistor.With the base-emitter junction functioning as a common gate and the dual collectors being biased to a selected voltage.The voltage can be adjusted from 0 - 60V depending on the application.The preset bias voltage on the input terminal allows for the transistor to be operated in the linear region, whilst the resistive element stabilizes the gain at different power voltage conditions.The low negative differential resistance of the collector current results in reliable operation at high collector currents.

The RN1101, LF is suitable for use in a wide range of CT (Current Transformer) applications, particularly where space saving is required. The low collector-emitter voltage and low noise characteristics make it suitable for high-precision measurement applications. The RN1101, LF is also used in interrupters and data receivers. The wide voltage range of the collector-emitter voltage and the low reverse breakdown voltage make it suitable for use in high-current switch circuit applications.

In conclusion, the RN1101,LF is a high-gain, low-noise and low-power transistor designed for use in a range of CT applications.The device has a pre-bias resistor and a wide voltage range, which makes it suitable for use in high-temperature, low-noise and power applications.The RN1101, LF is ideal for voltage-controlled oscillators, switching circuits, inverters, data receivers and current transformer applications.

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