Allicdata Part #: | RN1101MFVL3FTR-ND |
Manufacturer Part#: |
RN1101MFV,L3F |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 50V SOT723 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1101MFV,L3F Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
8000 +: | $ 0.01674 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Not For New Designs |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VESM |
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A type of transistor, known as the RN1101MFV,L3F, is a single, pre-biased component used in electronic circuit designs. This device is categorized as a bipolar junction transistor, or BJT. The device works by controlling the flow of current from its input to its output, depending on the voltage applied at its base. When used in properly designed circuits, it can be used for both switching and amplification. It can also be used to regulate the current in a circuit.
The RN1101MFV,L3F is a NPN transistor, which means it has a conductive emitter, a non-conductive base, and a conductive collector. In order for the device to switch on and off, current needs to be supplied to the base terminal. This current, when applied, will allow current to flow from the emitter to the collector with the device in an on state. To turn off the device, the base current needs to be removed.
To use the device in the circuit, it is important to understand the pre-biased nature of the device. A pre-biased device will have a known current flowing from the base to the collector. This current is called base current. The base current is used to reduce the amount of power needed to activate the device and can make certain circuits more efficient. By controlling the base current, the device can be used as a switch or amplifier.
The base current is a function of the base-emitter voltage. The base-emitter voltage is usually set to a certain value, usually around 0.65 to 0.7 volts. Depending on the current supplied to the base, the RN1101MFV,L3F can be used as a digital switch, a transistor amplifier, or a current regulator. By controlling the base current, it can be used to amplify or attenuate the signals in a circuit.
The RN1101MFV,L3F is used in a variety of applications, from data processing to radio frequency (RF) design. It can also be used for low-noise operation and in precision analog circuits. It is also used in power circuits and amplifier designs. As a pre-biased device, the RN1101MFV,L3F can reduce the amount of power needed to activate the device and make certain circuits more efficient.
In summary, the RN1101MFV,L3F is a single, pre-biased transistor that can be used in a range of circuit designs, depending on the current supplied to its base and the current running through its collector. It is most commonly used as a switch or as an amplifier, but it can also be used to regulate the current in a circuit. Due to its pre-biased nature, it can reduce the amount of power needed to activate the device and make certain circuits more efficient. Therefore, the RN1101MFV,L3F is a valuable component in a range of electronic designs.
The specific data is subject to PDF, and the above content is for reference
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