Allicdata Part #: | RN1105LF(CTTR-ND |
Manufacturer Part#: |
RN1105,LF(CT |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 50V 0.1W SSM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1105,LF(CT Datasheet/PDF |
Quantity: | 6000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.03043 |
6000 +: | $ 0.02646 |
15000 +: | $ 0.02249 |
30000 +: | $ 0.02117 |
75000 +: | $ 0.01985 |
150000 +: | $ 0.01764 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
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RN1105,LF transistors are special types of single, pre-biased Bipolar Junction Transistors (BJTs). These transistors are designed to be used in applications where the transistor needs to be pre-biased and steady-state conditions are desired. The main advantages of using a RN1105,LF BJT over other types of transistors is that the structure of the transistor is already pre-biased and does not require additional biasing circuitry. This reduces the cost and complexity of the circuit, as well as the time to manufacture.
A RN1105,LF BJT is a pnp type transistor, meaning that the main current flows from the emitter to the collector, and there is a negatively doped base between them. The base-emitter junction is forward biased, which means that the emitter has a higher voltage potential than the base. This bias is set by the manufacturer and is fixed. Due to this biasing, the collector-base junction is reverse biased.
In most BJT devices, external biasing circuits are necessary to ensure the transistor is properly biased such that it produces the desired results. This is not the case with RN1105,LF transistors. Due to the pre-biasing of the transistor, the biasing conditions can easily be maintained without any external biasing components. This eliminates the need for special biasing circuits and difficulty in setting up and adjusting them.
The RN1105,LF transistors have a high breakdown voltage between collector and base, which ensures that the transistor can operate in environments with high voltages and still provide reliable results. This makes the transistor suitable for applications that involve high voltage switching and power management.
The RN1105,LF transistors are also ideal for applications that require high frequency switching due to their low turn-on and turn-off times. These transistors employ a unique construction technology that allows them to switch faster than other types of transistors. This makes the transistors suitable for various applications such as communication systems and the control of high frequency switching circuits.
Overall, RN1105,LF transistors are a type of single, pre-biased Bipolar Junction Transistor designed for applications where pre-biased transistor operation is desired. The main advantages of these transistors are that they require no external biasing circuits and can handle high voltage and high frequency switching. This makes them suitable for various applications such as communication systems and the control of high frequency switching circuits.
The specific data is subject to PDF, and the above content is for reference
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