RN1115,LF(CT Discrete Semiconductor Products |
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Allicdata Part #: | RN1115LF(CTTR-ND |
Manufacturer Part#: |
RN1115,LF(CT |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.1W SSM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1115,LF(CT Datasheet/PDF |
Quantity: | 3000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.02282 |
6000 +: | $ 0.01985 |
15000 +: | $ 0.01687 |
30000 +: | $ 0.01588 |
75000 +: | $ 0.01489 |
150000 +: | $ 0.01323 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
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RN1115,LF (CT Application Field and Working Principle)
The RN1115,LF is a single, pre-biased bipolar transistor (BJT) primarily designed for analog and digital applications in both industrial and commercial environments. It is a cost-effective way to quickly and efficiently provide a high-performance solution for a wide variety of uses, from small circuits to high-power systems.
This device operates in two modes: active and cutoff. During active mode, the entire transistor is functioning, whereas in cutoff mode, the emitter and collector current is turned off. The RN1115,LF is capable of high-frequency switching in both cut-off and active modes, and its relatively low power consumption makes it an ideal choice for many applications.
The RN1115,LF has great power handling capabilities due to its reliable Darlington structure. This advanced design technique allows it to handle larger currents in source and collector regions, thereby maximizing its performance for applications requiring large amounts of power handling capability. In addition, this design also provides superior thermal stability and minimizes the impact of thermal variations during intense periods of operation.
One of the main features of the RN1115,LF is its low-frequency (CT) applications. The device is capable of providing a high-impedance transistor connection when operating at frequencies between 0.05MHz and 14Hz. It has the ability to switch load currents up to 0.5A and offers excellent control over switching times, thanks to its improved switching characteristics. This is especially advantageous in applications requiring precise timing control.
Another important feature of the RN1115,LF is its excellent voltage amplification characteristics. This device provides a high voltage gain of up to 20x, which allows for longer distance applications with higher voltage ranges within a reasonable power budget. In addition, the effective current gain of this device is very high, making it ideal for driving higher loads from AC or DC supply sources.
When it comes to its power handling capabilities, the RN1115,LF is capable of delivering up to 150 watts of average power with 100 watts of peak power delivery, making it suitable for industrial-grade applications. It also has high power-switching capability and is capable of providing a continuous wave (CW) or pulsed operation, making it ideal for a wide range of industrial applications.
The RN1115,LF has proven itself to have excellent long-term reliability and performance when used in a variety of applications. Tests conducted on a variety of conditions have shown that this device can provide consistent results over a wide temperature range of -55°C to +85°C. The high temperature operating range of up to +105°C is beneficial when used in higher power or temperature demanding application.
Overall, the RN1115,LF is an excellent device for small and large circuit designs and applications. Its cost-effectiveness and reliability make it a top choice for many applications and its superior switch characteristics, voltage amplification, and power handling capabilities make it an ideal choice for a wide range of applications including analog and digital circuits.
The specific data is subject to PDF, and the above content is for reference
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