Allicdata Part #: | RN1103LF(CTTR-ND |
Manufacturer Part#: |
RN1103,LF(CT |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.1W SSM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1103,LF(CT Datasheet/PDF |
Quantity: | 3000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.02282 |
6000 +: | $ 0.01985 |
15000 +: | $ 0.01687 |
30000 +: | $ 0.01588 |
75000 +: | $ 0.01489 |
150000 +: | $ 0.01323 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
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Low-frequency (LF) operations on current-transformer (CT) applications generally require single, pre-biased bipolar junction transistors (BJTs) for better performance and accuracy. For this design requirement, the RN1103 is the best choice for a reliable, consumer-friendly device. This article explores the theory behind working principle and applications field of the RN1103.
Working Principle
The working principle of the RN1103 is based on the concept of pre-biased BJTs. By pre-biasing the BJT, the degree of junction potential difference is reduced, resulting in higher current gain and higher efficiency as compared to non-biased BJTs. This, in turn, optimizes performance of the transistor in CT applications.
In a normal BJT, the base-emitter junction potential difference (Vbe) plays an important role in preventing excessive currents, wherein high gain is blocked by an increasing Vbe voltage when the emitter current increases. In pre-biased BJT, this Vbe is intentionally decreased by applying a reverse bias to the base-emitter junction resulting in higher current gain.
The resulting device displays a high load impedance in the collector-emitter region, which increases the device’s efficiency at LF applications.
Application Fields
The RN1103 is suitable for various current-transformer applications due to its low-frequency characteristics. Examples include:
- Current-setpoint controllers
- Measuring devices
- Power switching applications
- Isolation applications
- Motor speed control
The RN1103 is also widely used in data acquisition systems as a pre-biased BJT amplifier and as a signal-level conversion device in audio and video signal-switching systems.
Benefits
The RN1103 provides several advantages for current-transformer applications. It has a wide frequency response range, high current gain, high collector current, and a low-noise operation. Its low-frequency characteristics make it the ideal choice for CT applications requiring a single, pre-biased BJT.
Other advantages of the RN1103 include its internals simple RC networks, allowing for easier and faster system design, along with its higher thermal stability as compared to other BJTs. Additionally, its wide frequency range allows it to be used in a wide variety of applications, such as high-speed motor control and data acquisition systems.
Summary
The RN1103 is the best choice for current-transformer applications that require a single, pre-biased BJT. It offers a wide array of benefits, including a wide frequency response range, high current gain, high collector current, and a low-noise operation. Its low-frequency characteristics make it the ideal choice for various current-transformer applications.
The specific data is subject to PDF, and the above content is for reference
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