RN1111MFV,L3F Allicdata Electronics
Allicdata Part #:

RN1111MFVL3F-ND

Manufacturer Part#:

RN1111MFV,L3F

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: X34 PB-F VESM PLN (LF) TRANSISTO
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1111MFV,L3F datasheetRN1111MFV,L3F Datasheet/PDF
Quantity: 1000
8000 +: $ 0.01826
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM
Description

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Transistors - Bipolar (BJT) - Single, Pre-Biased - RN1111MFV,L3F Application Field and Working Principle

Bipolar Junction Transistors (BJT) are an important type of transistor that play an essential role in electronics, especially in the design of power control and signal amplification devices. The RN1111MFV,L3F is a single, pre-biased BJT, with a maximum collector-emitter voltage of 60VP-P and a maximum collector current of 1 Amp. It has multiple applications in the field of signal distortion and voltage regulation, as well as for amplifying sound and video signals for telecommunication and audio-video systems.

The basic principle of transistor operation is the formation of a small electric field that is able to control the current flowing through the device. In simple terms, a BJT consists of two layers of semiconductors with different types of conduction, referred to as p-type and n-type, being placed side by side. A current is applied to the p-type semiconductor and the resulting electric field produces an induced current in the n-type side. By controlling the current in the p-type side, it is able to control the current flowing through the transistor. The RN1111MFV,L3F utilizes this principle in order to create a variable voltage output.

The RN1111MFV,L3F also has a pre-biased design, which refers to the capacitor-diode combination that is included in its construction. This pre-bias helps to increase the device’s output voltage range. It also helps to reduce the amount of power loss that is experienced when the device is in operation, thereby increasing the efficiency of the system.

The main purpose of the RN1111MFV,L3F is to regulate the supply of power. By varying the current and voltage input, it is able to adjust the output voltage and limit the amount of power that is delivered to the load. This makes it ideal for use in power supply systems and other electronic applications where power regulation is important.

In addition to its power regulation capabilities, the RN1111MFV,L3F is also useful in signal distortion applications. By varying the input current, it is able to produce a distortion-free output signal. This makes it suitable for use in radio and television transmitters, as well as for Audio-video systems and other audio-visual products.

In conclusion, the RN1111MFV,L3F is a single, pre-biased BJT that is designed for use in controlling power and providing signal distortion. It offers a wide range of output voltages and is able to reduce power losses significantly. As such, it has a multitude of important applications in the field of electronics and continues to be a popular choice for professionals and hobbyists alike.

The specific data is subject to PDF, and the above content is for reference

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