Allicdata Part #: | RN1116MFVL3F-ND |
Manufacturer Part#: |
RN1116MFV,L3F |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F VESM TRANSISTOR PD 150M |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1116MFV,L3F Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.01826 |
Series: | -- |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VESM |
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The RN1116MFV,L3F is a field-effect transistor from Riverside Electronics. It belongs to the family of single, pre-biased transistors. The device is a P-type Field Effect Transistor (FET) with various application fields and functions.
The unique feature of the RN1116MFV,L3F is its integrated pre-bias switching. The pre-bias switching circuit connects to the gate of the FET, producing an adjustable turn-on voltage. This turn-on voltage is used to fully turn on the FET, allowing the use of the device in applications in which very little current is available.
The RN1116MFV,L3F can be used in a wide range of applications including applications requiring fast transition times, high power handling, limited power dissipation and high switching speeds. Some of the more common applications include switching power supplies, voltage regulators, color TV displays, car audio systems and other automotive applications.
In general, the RN1116MFV,L3F enables higher levels of efficiency in a variety of systems, from home electronics to motor control and modeling. This is due to its low on-state resistance, low input capacitance and low gate-to-source capacitance.
The working principle of the RN1116MFV,L3F is based on the application of an electric field to a semiconductor channel. The electric field creates an electrical barrier between the drain and source, which prevents the flow of electrons. This barrier must be overcome by voltage before current can flow.
When there is no applied voltage, carriers (electrons or holes) flow between the source and drain with no resistance, giving the device its low on-state resistance. When voltage is applied to the gate, the electric field increases at the drain and source, causing the current to decrease. The control of the gate voltage allows the user to modulate the current gain.
The RN1116MFV,L3F is also equipped with an over-voltage protection feature. This feature prevents the FET from being damaged when the input voltage exceeds its specified level.
The RN1116MFV,L3F transistor has a wide variety of application fields and is one of the most versatile transistors available. It is able to provide exceptional performance in a wide array of applications, from the home entertainment system to high power motor control applications. The integrated pre-bias switching technology allows for low power consumption and great levels of efficiency.
The specific data is subject to PDF, and the above content is for reference
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