Allicdata Part #: | RN2502(TE85LF)TR-ND |
Manufacturer Part#: |
RN2502(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.3W SMV |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2502(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | SMV |
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RN2502(TE85L,F) is a pre-biased, bipolar junction transistor array that can be used for a variety of electronic applications. It is primarily used for high-current switching, pulse width modulation, and noise reduction. The device consists of six transistors (2 differential pairs) in a single-line package with built-in advanced features such as high current drive capability and low on resistance.
One of the main advantages of RN2502(TE85L,F) is its efficiency. The device is designed to reduce power loss and current consumption, while offering improved device reliability and lower risks from thermal runaway. Additionally, the device has improved switching performance and better noise immunity, which helps to ensure consistent operation. The device also has a low voltage drop due to the low on resistance and an extended temperature range.
The RN2502(TE85L,F) device works on the basis of a feedback loop. The six transistors of the device are connected in a feedback loop so that any changes in the current or voltage of one of the transistors results in changes in the output current. This feedback loop allows the current to be drawn out of the device in a predictable and linear manner, providing better switching performance and improved noise immunity. Additionally, the feedback loop can be adjusted to allow different switching thresholds and varying levels of output current.
The RN2502(TE85L,F) device has a number of potential applications. It is commonly used for high current switching and for noise reduction in audio and radio systems. Additionally, the device is also used for pulse width modulation and for controlling the speed of motors, fans, and other devices. The device is versatile and can be used in a variety of electronic projects where an efficient and dependable switching solution is needed.
In summary, the RN2502(TE85L,F) is a pre-biased, bipolar junction transistor array that is efficient, dependable, and versatile. Its low on resistance, extended temperature range, and feedback loop make it an ideal choice for applications such as high current switching, pulse width modulation, and noise reduction. Additionally, its reliability and improved noise immunity provide consistent operation over long-term use.
The specific data is subject to PDF, and the above content is for reference
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