Allicdata Part #: | RN2511(TE85LF)TR-ND |
Manufacturer Part#: |
RN2511(TE85L,F) |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.3W SMV |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2511(TE85L,F) Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.05557 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | SMV |
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Bipolar junction transistors (BJT) have been around for a long time and have been used in a variety of applications, including both digital and analog. The RN2511(TE85L,F) is a pre-biased BJT array, specifically designed for high power applications. It has a number of features that make it suitable for a range of industrial and consumer applications.
The RN2511(TE85L,F) is a three-transistor array with an integrated pre-biased resistor network. This allows the device to operate with minimal additional external components. It has an overload current limitation of 25A and a high voltage rating of 1000V. The maximum collector-emitter voltage rating is 500V, and the maximum gate-emitter voltage rating is 15V. The maximum output voltage is 80V.
The working principle of the RN2511(TE85L,F) BJT array is based upon a basic BJT structure. The majority of current in the array flows from the collector to the emitter, when the base is forward biased. This current is then routed to the output terminals. The resistor network provides a current-balancing feature, which helps to prevent current hogging by one of the transistors. As well, it creates a bias voltage at the base of each transistor.
The RN2511(TE85L,F) BJT array is designed to be used in a number of applications including motor control, high power switching and current control in power amplifiers. It is also suited for use in RF power circuits and for protecting power supplies from current spikes. Its pre-biased design makes it ideal for use in high power applications, where additional components would be costly. It is capable of handling high inrush currents and has a higher reliability than its competitors.
In conclusion, the RN2511(TE85L,F) is a pre-biased BJT array, specifically designed for high power applications. Its integrated pre-biased resistor network makes it ideal for use in a variety of motor control, switching, and RF power applications. It has a number of features, including an overload current limiter and a high voltage rating, which make it suitable for use in a range of industrial and consumer applications. It has a higher reliability than its competitors and is capable of handling high inrush currents.
The specific data is subject to PDF, and the above content is for reference
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