
Allicdata Part #: | RN2507(TE85LF)TR-ND |
Manufacturer Part#: |
RN2507(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.3W SMV |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | SMV |
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The RN2507(TE85L,F) is an array of three, pre-biased, transistor integrated circuits that are categorized under transistors – bipolar (BJT) – arrays, pre-biased. It is specifically a hybrid containing two monolithic Darlington pairs with complementary collector-emitter voltage. Each material has an emitter current through 2mA and a PNP type integrated Darlington pair is employed on each device. Each Darlington pair of the device has its collector connected to the supply, while its non-inverting input is connected to the basebias voltage. The basebias voltage is provided by the pre-biased integrated circuits, which makes the device suitable for directly interfacing to logic circuits.
The unified construction of the RN2507 provides a completely matched structure for both the Darlington pairs, thereby ensuring high reliability and stability for the device. It also provides a rapid switching time since the Darlington pairs are typically optimized to the same switching characteristics. The RN2507 operates from a supply voltage range between 4.5V and 18V, which makes it suitable for both low voltage and high voltage applications. With optimized frequency response and low drive loss, it is ideally suited for commutation as well as switching applications.
The RN2507 also features a low saturation voltage, typically below 0.4V, which enables the device to reduce power losses in order to reduce the overall power requirements in a system. This device also integrates a high current gain of up to 680, which is obtained through the combination of the two Darlington pairs. Additionally, the device can be paralleled with other devices to increase the number of channels and to increase the total current ratings.
In terms of applications, the RN2507 is mainly used in industrial and consumer applications as a pre-biased device, eliminating the need for an external bias voltage or current. Additionally, it has been used in motor control and interface applications to add safety features, such as current overload protection. This device is also commonly employed in safety and data acquisition systems, where its low noise and low power features are utilized.
In terms of its working principle, the RN2507 is basically a three-stage integrated circuit, which combines two monolithic Darlington pairs with complementary collector-emitter voltage. Each pair of this device is optimized for the same switching characteristics and it operates from a power supply range of 4.5V to 18V. The basebias voltage of the device is provided by pre-biased integrated circuits, thus eliminating the need for an external bias voltage or current. The two stages comprising the Darlington pairs are combined with a high current gain of up to 680, while the lowest saturation voltage is typically below 0.4V, thus reducing the losses.
The specific data is subject to PDF, and the above content is for reference
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