Allicdata Part #: | RN2506(TE85LF)TR-ND |
Manufacturer Part#: |
RN2506(TE85L,F) |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.3W SMV |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2506(TE85L,F) Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.02434 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | SMV |
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RN2506(TE85L,F) is a multi-function, pre-biased, bipolar array transistor device designed for use in linear amplifier applications. It consists of two field-effect transistors (FETs) that are connected in series and coupled to two pairs of NPN transistors that are connected in parallel. The two FETs are connected in an active-load configuration, and the transistors are connected in a Darlington-type configuration. This allows the device to operate at higher voltages, while still delivering high current gain. The array also provides temperature compensation, which helps to extend the life of the transistors.
This device is suitable for use in a variety of linear amplifier applications. It is well suited for audio power amplification, as well as for use in audio switching, low-frequency signal amplification, and low-noise amplification. It is also useful in applications that require low power consumption and/or high switching speeds.
The working principle behind RN2506(TE85L,F) is based on the current gain of the FETs and transistors in the device. The FETs are connected in series and the transistors are connected in parallel, resulting in a higher current gain. The FETs provide a higher input impedance and a lower output impedance, which allows for better control of the device’s current.
The pre-biased configuration of the device also helps to increase its efficiency. The base-emitter bias of the NPN transistors helps to lower the device’s supply voltage, reducing its power consumption. The pre-biased configuration also reduces the device’s thermal output power, helping to reduce the device’s temperature during operation.
The RN2506(TE85L,F) bipolar array device is a versatile, efficient, and reliable device that is suitable for a variety of linear amplifier applications. It offers a high current gain, a high input impedance, a low output impedance, and a low power consumption in a pre-biased configuration. Its pre-biased configuration helps to increase its overall efficiency, making it an ideal choice for use in audio amplification, low-noise amplification, and other linear amplifier applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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