RP1L055SNTR Discrete Semiconductor Products |
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Allicdata Part #: | RP1L055SNTR-ND |
Manufacturer Part#: |
RP1L055SNTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 60V 5.5A MPT6 |
More Detail: | N-Channel 60V 5.5A (Ta) 2W (Ta) Surface Mount MPT6 |
DataSheet: | RP1L055SNTR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | MPT6 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 730pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 49 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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RP1L055SNTR application field and working principle
The RP1L055SNTR is a type of transistor that comes under the family of MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors). It is a single type MOSFET that is made up of insulated gate electrodes to produce a highly efficient switch. This RP1L055SNTR transistor is used in a variety of applications such as low voltage power management, low voltage protection, media switching, load switching application, and in other digital systems.
MOSFETs are widely used in the power industry because of their low on resistance and fast switching speeds. They are also popular for their high thermal resistance and low gate drive voltages. The main advantage of using MOSFETs for switching applications is that they operate without heat generation, resulting in a more efficient circuit.
The principle on which the RP1L055SNTR works is that of field effect controlling of the electric current. A small voltage is applied, which creates an electric field. This electric field is then used to control the drain current and the gate current. The gate voltage can be adjusted in order to change the amount of current passing through the drain and hence controlling the drain current. This way, the RP1L055SNTR can be used to control the current in the required application.
This versatile transistor can be used in a wide variety of applications such as low voltage power management, low voltage protection, media switching, load switching application, and in other digital systems. It is mainly applicable in automotive, handheld, and industrial circuits, due to its exceptional performance. It’s highly sensitive and robust design ensures efficient and reliable operation in most applications.
The RP1L055SNTR comes in various sizes, shapes and types. The most commonly used type of transistor is the N-channel MOSFET. The sizes available range from 3-50V. The power rating and the on-resistance of the transistor can be varied according to the application. The maximum power that can be handled by the MOSFET varies from 5A to 25A.
The high thermal resistance and low input power consumption of the RP1L055SNTR makes it ideal for data switching, power management, and low-voltage protection applications. The RP1L055SNTR can be used in low voltage power systems, high speed switching circuits, converters and rectifiers, automotive systems, and other industrial applications.
The specific data is subject to PDF, and the above content is for reference
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