RQ1C075UNTR Allicdata Electronics

RQ1C075UNTR Discrete Semiconductor Products

Allicdata Part #:

RQ1C075UNTR-ND

Manufacturer Part#:

RQ1C075UNTR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 20V 7.5A TSMT8
More Detail: N-Channel 20V 7.5A (Ta) 700mW (Ta) Surface Mount T...
DataSheet: RQ1C075UNTR datasheetRQ1C075UNTR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 1mA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RQ1C075UNTR is a transistor that belongs to the family of Field Effect Transistors (FETs). It is a single MOSFET, also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Single MOSFETs are used in a variety of applications, including digital and analog circuits. They are commonly used for amplification, voltage regulation, and switching.

MOSFETs are devices consisting of three terminals: the source, the gate, and the drain. The source and the drain are connections to the two conducting channels of the transistor, while the gate is a control element used to regulate the current passing from the source to the drain. The current flowing from the source to the drain is determined by the threshold voltage applied to the gate. When the voltage applied to the gate is increased, the threshold voltage required to allow the current to flow increases, and the current flowing from the source to the drain decreases. Conversely, when the voltage applied to the gate is decreased, the threshold voltage required to allow the current to flow decreases, and the current flowing from the source to the drain increases.

The RQ1C075UNTR is a MOSFET with an integrated body diode, meaning that it has the ability to conduct current in both directions. This makes it suitable for power switching applications, such as relays, motors, and solenoids, as it can be used to control the direction of current flow. This transistor can also be used in voltage regulation circuits, as its current control capabilities make it ideal for regulating the voltage output of power supplies, allowing them to be adjusted as needed.

The RQ1C075UNTR can also be used in digital circuits, such as logic gates, to control the flow of information. In these circuits, the current flow is turned on or off depending on the voltage applied to the gate, allowing it to function as a logic gate. This makes the RQ1C075UNTR an essential component in digital circuits, as it allows them to implement logical operations quickly and easily.

In addition, the RQ1C075UNTR can be used in analog circuits to amplify signals. By applying a low voltage to the gate, the threshold voltage required to allow the current to flow is lowered, allowing it to amplify a signal. This makes the RQ1C075UNTR an important component in a variety of analog circuits, as it allows them to increase the amplitude of signals.

The RQ1C075UNTR is a versatile and cost effective transistor, making it well suited for a variety of applications. It\'s ability to control current flow in both directions makes it suitable for power switching, while its current control capabilities make it ideal for voltage regulation and amplification in both digital and analog circuits. This makes the RQ1C075UNTR an important component in a range of applications.

The specific data is subject to PDF, and the above content is for reference

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