RQ1E050RPTR Discrete Semiconductor Products |
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| Allicdata Part #: | RQ1E050RPTR-ND |
| Manufacturer Part#: |
RQ1E050RPTR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET P-CH 30V 5A TSMT8 |
| More Detail: | P-Channel 30V 5A (Ta) 700mW (Ta) Surface Mount TSM... |
| DataSheet: |  RQ1E050RPTR Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | 8-SMD, Flat Lead |
| Supplier Device Package: | TSMT8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 700mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 31 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The RQ1E050RPTR is a type of Field-Effect Transistor (FET). It is a single PhotoMOS FET Relay for load switching and detection applications, consisting of an infrared light-emitting diode (IRED) and a photo-MOSFET (FET) in a 4-pin SOP package. The RQ1E050RPTR is an ideal solution for audio/video and industrial applications, when a reliable and low-profile FET is required.
Application Fields
The RQ1E050RPTR provides a variety of applications. It is used in electrical and creative applications such as light dimming, LED lighting, motor control, audio/video, telecommunications, and hardware diagnostics. The optically driven FET technology is ideally suited for applications where light and switching power is controlled.
The RQ1E050RPTR is also suitable for use in energy-efficient applications that require switching power to be reliably operated with minimal energy consumption. It offers a reliable, low-power (1.2W) solution that is ideal for switching applications in consumer and industrial power supplies, motors, and industrial sensors.
The RQ1E050RPTR is also a reliable choice for communications applications such as LAN switching and Ethernet control. It is able to provide fast, low-power, low-profile switching for communications applications.
Working Principle
The RQ1E050RPTR is composed of an infrared light-emitting diode and a photo-MOSFET in a small package, providing a single photo-switchable FET solution. Its working is based on the principle of electro-optical coupling, in which an electrical signal is converted into an optical signal by a light-emitting diode, and then converted back into an electrical signal by a light-sensitive MOSFET.
When an electrical current is applied to the diode, the diode emits an infrared light and switch on the MOSFET, providing a low-resistance path. With the MOSFET activated, the device will remain on until the current is reduced to a point that the diode no longer emits light, switching off the MOSFET. In this way, it is possible to switch-on and switch-off loads with a very low power consumption.
The RQ1E050RPTR uses a special optically isolated design with a built-in ESD protection, enabling the switch to withstand ESD pulses of up to 6kV. It is available in a 4-pin SOP package with the following features: ESD protection to 6kV, low-power operation, infrared light and switch output. The RQ1E050RPTR is an ideal solution for applications where small size and low power are required.
The specific data is subject to PDF, and the above content is for reference
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