RQ7E110AJTCR Allicdata Electronics

RQ7E110AJTCR Discrete Semiconductor Products

Allicdata Part #:

RQ7E110AJTCRTR-ND

Manufacturer Part#:

RQ7E110AJTCR

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NCH 30V 11A MIDDLE POWER MOSFET
More Detail: N-Channel 30V 11A (Tc) 1.5W (Tc) Surface Mount TSM...
DataSheet: RQ7E110AJTCR datasheetRQ7E110AJTCR Datasheet/PDF
Quantity: 3000
3000 +: $ 0.25633
Stock 3000Can Ship Immediately
$ 0.29
Specifications
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Rds On (Max) @ Id, Vgs: 9 mOhm @ 4.5A, 11V
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V
FET Feature: --
Power Dissipation (Max): 1.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT8
Package / Case: 8-SMD, Flat Lead
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Description

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RQ7E110AJTCR is a N-Channel Trench MOSFET chip for use in a variety of applications. It is manufactured by Renesas Electronics and is a member of their SLT-trenchMOSFET family. The chip features a high drain current, a low on resistance (RDSon) and a low gate charge (Qg). This makes it an ideal choice for switch mode power supplies, DC/DC converters and hybrid/electric vehicle applications.

The RQ7E110AJTCR is a single N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) which has two devices, an insulated gate field-effect transistor and a source follower, in one package. It is also known as an enhancement mode MOSFET as it is normally off, and requires positive voltage applied to the gate in order to switch it on.

The RQ7E110AJTCR has a current carry capability of 110A and a drain-to-source voltage rating of 40V. It has an on resistance (RDSon) of 0.046 ohms, a gate threshold voltage (Vth) of 5V, a gate charge (Qg) of 65nC, and a minimum drain-to-source breakdown voltage (BVdss) of 8V.

The RQ7E110AJTCR is mainly used as an electronic switch in devices such as DC/DC converters, switch power supplies, and hybrid or electric vehicle applications. It is used to control the on/off state of an electronic circuit, making it easier to regulate or reduce power consumption.

The main benefit of using the RQ7E110AJTCR is its low on resistance (RDSon) and lower gate charge (Qg). This translates to a lower voltage drop when the FET is on, as well as a lower power consumption. This allows the device to operate more efficiently and can result in a longer battery life in portable electronics, as well as performance gains in power-throughput and temperature stability in DC/DC converters.

The working principle of the RQ7E110AJTCR is based on the classic MOSFET principle. A voltage is applied to the gate and it allows for current to flow from the source to the drain. When the voltage is removed from the gate, the MOSFET is then off and no current will flow from the source to the drain.

The RQ7E110AJTCR is a versatile, high-performance single N-Channel MOSFET with a low on resistance (RDSon) and low gate charge (Qg). It is suitable for a variety of applications such as DC/DC converters, switch power supplies, and hybrid or electric vehicle applications. It is able to operate at high frequencies and has a low voltage drop which results in better efficiency and performance.

The specific data is subject to PDF, and the above content is for reference

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