| Allicdata Part #: | RQJ0303PGDQA#H6-ND |
| Manufacturer Part#: |
RQJ0303PGDQA#H6 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET P-CH 30V 3.3A 3MPAK |
| More Detail: | P-Channel 30V 3.3A (Ta) 800mW (Ta) Surface Mount 3... |
| DataSheet: |  RQJ0303PGDQA#H6 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 3.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 68 mOhm @ 1.6A, 10V |
| Vgs(th) (Max) @ Id: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Vgs (Max): | +10V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 625pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 800mW (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 3-MPAK |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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Single FETs
Field-effect transistors (FETs) are an integral part of today’s ever-shrinking and increasingly complex electronics. Among FETs is the single FET, a widely used and highly popular solution for many applications. In this context, we will discuss the field of application and working principle of the RQJ0303PGDQA#H6.
Application Field of RQJ0303PGDQA#H6
The RQJ0303PGDQA#H6 is a single FET designed as a low voltage and low RDSON (drain-to-source resistance) solution. This makes it suitable for a variety of applications, such as current-sensing, high-frequency switching, and power management. It is particularly useful in power-management applications requiring high efficiency, such as DC/DC converters and LED lighting. Additionally, its increased current capacity makes it well-suited for automotive applications.
Working Principle of RQJ0303PGDQA#H6
The working principle of the RQJ0303PGDQA#H6 is based on that of other FETs. As its name implies, it is a single FET, meaning a single gate, drain, and source are utilized. The single FET works by creating a conductive channel between the drain and source when a small voltage is applied to the gate. This voltage (generally referred to as the gate-to-source voltage), creates an electric field to repel electrons from the middle of the channel and make a region of high resistance, resulting in a large resistance between the drain and source. Thus, a current cannot flow through this region. By controlling the gate-to-source voltage, the resistance between the drain and source can be adjusted, thus allowing current to flow.
Conclusion
The RQJ0303PGDQA#H6 single FET is highly applicable in a wide range of electronics. Its small size, low resistance, and current-sensing capabilities make it particularly suitable for high-frequency switching, power management, and automotive applications. Its working principle employs a simple yet reliable method of controlling resistance using gate-to-source voltage, allowing it to be employed in a variety of electronics.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RQJ0303PGDQA#H6 | Renesas Elec... | 0.0 $ | 1000 | MOSFET P-CH 30V 3.3A 3MPA... |
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