RRL025P03TR Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Rds On (Max) @ Id, Vgs:	75 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	5.2nC @ 5V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	480pF @ 10V
FET Feature:	--
Power Dissipation (Max):	320mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TUMT6
Package / Case:	6-SMD, Flat Leads

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Introduction of RRL025P03TR

RRL025P03TR is a high-voltage low-drain-source resistance metal oxide semiconductor field-effect transistor (MOSFET) manufactured by ROHM Semiconductor. It is capable of operating up to 25V and employing the latest trench gate structure, provides excellent on-state current characteristics with lower power dissipation over a broad temperature range.

Application of RRL025P03TR

RRL025P03TR has been widely used in many applications, including power management systems (AC-DC converters, DC-DC converters, UPS power modules, battery protection switching applications), motor speed control, automotive load switching, and driver applications. It is suitable for applications requiring high drain-source voltage, high power efficiency and low power loss.

Working Principle of RRL025P03TR

RRL025P03TR works by the principle of the MOSFET. A MOSFET is a type of field-effect transistor (FET) that uses the effect of an electric field on a conducting channel between a source and a drain. When a voltage is applied to the gate, its electric field modifies the electrostatic characteristics of the channel, allowing a current to flow between the source and the drain. In the case of RRL025P03TR, this is multiplied by the use of a trench gate structure, providing excellent on-state current characteristics. The device is designed to achieve low power dissipation and operate over a broad temperature range. It has an operating temperature range of -55°C to 150°C, and provides low power dissipation at temperatures up to 150°C. By utilizing the latest trench gate structure, RRL025P03TR is capable of providing a low on-state resistance (RDS(on)) combined with a high degree of drain-source current (ID) control at gate sources voltages (VGS) up to 25V. It features a 2.5mΩ typical drain-source on resistance (RDS(on)), and a maximum drain-source ID of 62 A at 25V VGS. Additionally, the device features a high-temperature storage capability, ensuring heat dissipation at a temperature of 150°C.

Conclusion

RRL025P03TR MOSFET is an ideal power management solution for applications that require high current and voltage. It is suitable for many applications, including power management systems, motor speed control, automotive load switching and driver applications. Due to its robust design and excellent on-state current characteristics, it provides low power dissipation and a high degree of drain-source current control at gate sources voltages (VGS) up to 25V. Its high operating and storage temperature range ensures reliable performance even in harsh industrial environments.

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