RRQ045P03TR Allicdata Electronics
Allicdata Part #:

RRQ045P03TR-ND

Manufacturer Part#:

RRQ045P03TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 30V 4.5A TSMT6
More Detail: P-Channel 30V 4.5A (Ta) 600mW (Ta) Surface Mount T...
DataSheet: RRQ045P03TR datasheetRRQ045P03TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V
FET Feature: --
Power Dissipation (Max): 600mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT6 (SC-95)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Description

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Single MOSFETs are commonly utilized in a wide range of applications due to their distinct advantages. They have low voltage operation, low power consumption, and low cost. As such, they are frequently used as a switch, amplifier, and as an analog device. One specific single MOSFET device, the RRQ045P03TR, is used for a variety of applications.

The RRQ045P03TR is a 30 V, \'large\' MOSFET device. The industry standard T part number indicates the device is part of a family of products that have the same physical construction and electrical characteristics. This allows the user to find a specific MOSFET device that fits their requirements without having to acquire the entire family of devices.

The RRQ045P03TR device has a drain-source resistance of 45 Ohms when the gate-source voltage is on. It also has a drain current spec of 15 Amps and a gate charge of 28 nC. This range of characteristics make the RRQ045P03TR an ideal choice for many different applications.

Perhaps the most common application for the RRQ045P03TR is as a power switch. It can be used to switch a DC voltage from one point to another, and is suitable for controlling low voltage components, such as LEDs. This device can also be used as an amplifier, for applications that require extremely high output currents, such as audio equipment. Other applications for the RRQ045P03TR include power regulation, motor speed control, and lighting controls.

The working principle of the RRQ045P03TR is generally the same as that of any other single MOSFET device. When a DC voltage is applied to the gate-source terminal of the device, a channel is formed between the source and drain terminals. This channel allows current to flow between the source and drain, which controls the flow of power to other components.

The channel of the RRQ045P03TR is controlled by the gate-source voltage, which can be adjusted to alter the conductivity of the device. In addition, the RRQ045P03TR also features temperature protection, which prevents the device from becoming damaged due to excessive heat.

The RRQ045P03TR is an effective and reliable single MOSFET device, and can be used in a variety of applications. Its low power consumption, low cost, and wide range of characteristics make it an excellent choice for many different applications. Its working principle is based on the same principles as any other single MOSFET device, allowing it to be put to good use in a range of different applications.

The specific data is subject to PDF, and the above content is for reference

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