RRR015P03TL Allicdata Electronics
Allicdata Part #:

RRR015P03TLTR-ND

Manufacturer Part#:

RRR015P03TL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 30V 1.5A TSMT3
More Detail: P-Channel 30V 1.5A (Ta) 540mW (Ta) Surface Mount T...
DataSheet: RRR015P03TL datasheetRRR015P03TL Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
FET Feature: --
Power Dissipation (Max): 540mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT3
Package / Case: SC-96
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RRR015P03TL is a Power MOSFET. This type of FET is designed to switch high power, currents or signals with high efficiency. It is an enhancement mode MOSFET, with a relatively low on-resistance, allowing for very low to zero volts switching, making them suitable for use in low voltage power switching applications. The device consists of an n-type metal-oxide-semiconductor field-effect transistor (MOSFET).

The device has a drain-to-source breakdown voltage (V(BR)DSS) of 115V, which means that, when the p-type gate is driven to a voltage at least 1.6V higher than the source, electrons flow through the channel. This constitutes the device\'s operation in the enhancement mode. The device has a maximum drain current (ID) of 16A, which indicates that it can handle high power currents. The power dissipation is 89W, which is quite high and indicates a device capable of handling high currents.

The RRR015P03TL is commonly used in applications such as switching power supplies, motor control, high power switching, and high voltage AC or DC control. The device excels in power conversion, thanks to its high current capability, allowing for the conversion of large amounts of energy with minimum efficiency losses ( up to 97%). It can also be used for various high power switching applications, including power amplifiers, light emitting diode (LED) drivers, and other related high power devices. The device also excels in high voltage and current control applications, thanks to its low on-resistance and relatively high 115V breakdown voltage.

The working principle of the RRR015P03TL is fairly simple. The device consists of three terminals - gate (G), drain (D) and source (S). The source terminal is voltage referenced, usually to ground. The gate terminal is used to control the device, and the drain is used for current conduction. The gate is driven to a voltage higher than the source in order to create an electric field (due to the depletion region) which allows for electrons to flow from the source to the drain, thus creating a conductive channel and enabling the device to conduct current.

In summary, the RRR015P03TL is a high-performance, high-speed, low on-resistance MOSFET, designed to switch high power, currents or signals with high efficiency. Its applications include power conversion, high power switching, and high voltage AC or DC control. The device is commonly used in switching power supplies, motor control, high power switching, and high voltage AC or DC control applications. The working principle of the RRR015P03TL is simple; a voltage is applied to the gate, creating an electric field which then allows for current to flow between the source and the drain terminals.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RRR0" Included word is 3
Part Number Manufacturer Price Quantity Description
RRR040P03TL ROHM Semicon... -- 1000 MOSFET P-CH 30V 4A TSMT3P...
RRR015P03TL ROHM Semicon... -- 3000 MOSFET P-CH 30V 1.5A TSMT...
RRR030P03TL ROHM Semicon... -- 6000 MOSFET P-CH 30V 3A TSMT3P...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics