Allicdata Part #: | RRS075P03TB1-ND |
Manufacturer Part#: |
RRS075P03TB1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 30V 7.5A 8SOIC |
More Detail: | P-Channel 30V 7.5A (Ta) Surface Mount 8-SOIC |
DataSheet: | RRS075P03TB1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Ta) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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RRS075P03TB1 is a two-terminal insulated gate bipolar transistor (IGBT). It is a silicon carbide (SiC) MOSFET device which can operate at high voltages and temperature. The power dissipation capability of the RRS075P03TB1 is up to 75W and the maximum junction temperature can reach up to 175°C. It features fast switching speed, low internal losses, good thermal stability and ESD capability, and excellent avalanche parameters. These features make the RRS075P03TB1 ideal for many applications in areas such as high-voltage inverters, motor drives, UPS systems, welding systems, and solar power modules.
The RRS075P03TB1 consists of a N-channel MOSFET section in series with a PNP bipolar power transistor to control the electrical current. The MOSFET section consists of a N-channel MOSFET which acts as a main switch and a P-channel MOSFET which acts as a discharge switch. The N-channel MOSFET section is controlled by an insulated gate, similar to a regular MOSFET. However, the PNP bipolar power transistor is controlled by a second insulated gate, called the base.
The RRS075P03TB1 works by controlling the electrical current passing through it. When the insulated gates of the MOSFET section and the power transistor are off, no current can flow through the RRS075P03TB1. The base of the power transistor is then energized, turning it on and allowing current to flow through the device. The N-channel MOSFET then turns on, and acts as a main switch. The power transistor\'s emitter-collector channel then acts as a discharge switch, allowing the stored energy to be released when the insulated gate of the MOSFET section is turned off.
The RRS075P03TB1 is mainly used in applications such as motor drives, UPS systems, solar modules, and high voltage inverters. The most common application for RRS075P03TB1 is motor drive applications. In such applications, the RRS075P03TB1 is used to control the current in a motor, by switching it off and on rapidly. This allows the motor to change speed and direction quickly and efficiently, while minimizing the loss of power and reducing the amount of current needed.
In UPS systems, the RRS075P03TB1 is used to switch between AC and DC power, as well as to regulate the output voltage and current. This allows the UPS to provide constant power, even during mains power outages. The RRS075P03TB1 is also often used in solar power modules, to control the current flow, and to increase the efficiency of the system.
The RRS075P03TB1 is also commonly used in high voltage inverters, to control the voltage output. This allows the inverter to provide a constant and regulated output even when the input voltage fluctuates. This is essential for applications such as arc welding, where high currents and voltages are required.
Overall, the RRS075P03TB1 is a versatile device which can be used in a wide range of applications. Its combination of fast switching speed, low internal losses, and excellent avalanche parameters make it an ideal solution for many high-powered applications.
The specific data is subject to PDF, and the above content is for reference
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